1/12/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, NOT ASSEMBLED INTO MODULES AND NOT INSTALLED INTO A PANEL, FOR REPAIR OF ELECTRICAL SYSTEMS IN UNITS AND UNITS, SPARE PARTS FOR PREVIOUSLY IMPORTED ROAD-BUILDING EQUIPMENT KOMATSU , NOT INTENDED FOR OPERATION ON ROADS | 1.44 | 404.28 | Japan | MOSCOW RUSSIA | KOMATSU CIS LLC |
1/22/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, NOT ASSEMBLED INTO MODULES AND NOT INSTALLED INTO A PANEL, FOR REPAIR OF ELECTRICAL SYSTEMS IN UNITS AND UNITS, SPARE PARTS FOR PREVIOUSLY IMPORTED ROAD-BUILDING EQUIPMENT KOMATSU , NOT INTENDED FOR OPERATION ON ROADS | 0.36 | 102.87 | Japan | MOSCOW RUSSIA | KOMATSU CIS LLC |
1/21/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, WITH A DISPOSIVE POWER NOT LESS THAN 1 W, NOT A SCRAP OF ELECTRICAL EQUIPMENT, NOT POWER TRANSFORMERS, NOT FOR RAILWAY TRANSPORT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO ELECTRONIC EQUIPMENT | 0 | 4.48 | Japan | MOSCOW RUSSIA | STATUS LLC |
1/21/2022 | 8541290000 | SEMICONDUCTOR DEVICES: TRANSISTORS IN A CASE FOR MOUNTING ON PRINTED BOARDS, NOT A SCRAP OF ELECTRICAL EQUIPMENT. | 0 | 29.22 | Japan | ST PETERSBURG RUSSIA | EKOMP LLC |
1/21/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: | 1.48 | 990.69 | Japan | SAINT PETERSBURG RUSSIAN FEDERATION | MT SYSTEMS LLC |
1/20/2022 | 8541290000 | INSULATED GATE BIPOLAR TRANSISTOR MODULES FOR GENERAL INDUSTRIAL APPLICATION FOR FREQUENCY CONVERTERS AND POWER SUPPLY DISTRIBUTION IN UNITS OF RADIO-ELECTRONIC PRODUCTS, NOT SCRAP OF ELECTRICAL EQUIPMENT, NON-MILITARY PURPOSE: BIPOLAR TRANSI | 1 | 274.44 | Japan | HONG KONG | PROISTOK LLC |
1/20/2022 | 8541290000 | INSULATED GATE BIPOLAR TRANSISTOR MODULES FOR GENERAL INDUSTRIAL APPLICATION FOR FREQUENCY CONVERTERS AND POWER SUPPLY DISTRIBUTION IN RADIO-ELECTRONIC PRODUCT UNITS, NOT SCRAP OF ELECTRICAL EQUIPMENT, NON-MILITARY PURPOSE: 3-PHASE IGB BRIDGE | 33.8 | 4940.39 | Japan | HONG KONG | PROISTOK LLC |
1/26/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, WITH A DISPOSIVE POWER OF MORE THAN 1 W, ARE NOT PHOTOTRANSISTORS, NOT A SCRAP OF ELECTRICAL EQUIPMENT, NOT FOR MILITARY PURPOSE | 18.86 | 81638.8 | Japan | NARITA TOKYO INTERNATIONAL AIRPORT | EM TI I I SUMMIT SPB LLC |
1/24/2022 | 8541290000 | TRANSISTORS WITH A DISPOSIVE POWER OF MORE THAN 1 W FOR THE MANUFACTURE OF ELECTRICAL EQUIPMENT: | 255 | 66410.2 | Japan | DUSSELDORF GERMANY | MITSUBISHI ELECTRIC RUS LLC |
1/13/2022 | 8541290000 | SEMICONDUCTOR DEVICES: PNP-CHANNEL MOS-TRANSISTOR. NOMINAL VOLTAGE -100 V. CURRENT -5A. DIMENSIONS 2.3 X 6.5 X 5.5MM. POWER 1W. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 3.86 | Japan | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |