1/19/2022 | 8542323900 | MONOLITHIC INTEGRATED MICROCIRCUIT - DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY OF MORE THAN 512 MB, WITHOUT FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT CONTAINING. CIPHROV. (CRYPTOGRAPH.) FUNDS, NOT SCRAP OF ELECTRICAL EQUIPMENT, | 0.33 | 4259.1 | South Korea | MOSCOW RUSSIA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/23/2022 | 8542323900 | INTEGRATED, MONOLITHIC, DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF MORE THAN 512 MBIT, WITHOUT A FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT A SCRAP OF ELECTRICAL EQUIPMENT, ACCESSORIES FOR INDUSTRIAL ASSEMBLY ASSEMBLY | 1.15 | 1116.55 | Taiwan | TAIPEI AIRPORT TAIWAN | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/17/2022 | 8542323900 | INTEGRATED ELECTRONIC MICROSCIRCUIT, MONOLITHIC (DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF MORE THAN 512 Mbit), WITHOUT THE FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT, CIVIL APPLICATION, FOR INDUSTRIAL USE | 1.85 | 19154.9 | South Korea | MOSCOW RUSSIA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/23/2022 | 8542323900 | MONOLITHIC INTEGRATED MICROCIRCUIT - DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY OF MORE THAN 512 MB, WITHOUT FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT CONTAINING. CIPHROV. (CRYPTOGRAPH.) FUNDS, NOT SCRAP OF ELECTRICAL EQUIPMENT, | 1.62 | 19112.5 | South Korea | INCHHON SEOUL | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/23/2022 | 8542323900 | MONOLITHIC INTEGRATED MICROCIRCUIT - DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY OF MORE THAN 512 MB, WITHOUT FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT CONTAINING. CIPHROV. (CRYPTOGRAPH.) FUNDS, NOT SCRAP OF ELECTRICAL EQUIPMENT, | 3.69 | 45789.6 | South Korea | INCHHON SEOUL | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/23/2022 | 8542323900 | MONOLITHIC INTEGRATED MICROCIRCUIT - DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY OF MORE THAN 512 MB, WITHOUT FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT CONTAINING. CIPHROV. (CRYPTOGRAPH.) FUNDS, NOT SCRAP OF ELECTRICAL EQUIPMENT, | 6.6 | 73045.4 | South Korea | INCHHON SEOUL | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/23/2022 | 8542323900 | MONOLITHIC INTEGRATED MICROCIRCUIT - DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY OF MORE THAN 512 MB, WITHOUT FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT CONTAINING. CIPHROV. (CRYPTOGRAPH.) FUNDS, NOT SCRAP OF ELECTRICAL EQUIPMENT, | 5.14 | 63491.5 | South Korea | MOSCOW RUSSIA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/23/2022 | 8542323900 | MONOLITHIC INTEGRATED MICROCIRCUIT - DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY OF MORE THAN 512 MB, WITHOUT FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT CONTAINING. CIPHROV. (CRYPTOGRAPH.) FUNDS, NOT SCRAP OF ELECTRICAL EQUIPMENT, | 38.86 | 143158.5 | South Korea | MOSCOW RUSSIA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/25/2022 | 8542323900 | INTEGRATED MONOLITHIC MICROCIRCUIT, DYNAMIC RANDOM MEMORY DEVICES WITH 2000 Mbit MEMORY FOR INSTALLATION IN ELECTRONIC BOARDS. NOT WASTE, NOT SCRAP OF ELECTRICAL EQUIPMENT, DOES NOT CONTAIN PRECIOUS METALS, NOT FOR HOUSEHOLD USE | 0.2 | 681.82 | Taiwan | SHENZHEN CHINA | ELECATE LLC |