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Latest Russia Import Data of Textile under HS Code 8541290000 from China

Get latest Russia Import Data of textile under HS Code 05010000 based on shipping from China. Find detailed Russia imports from China with Unit, Price, Buyer name, Port of Unloading & shipment information. Align your business to Russia Market using an impactful data-driven strategy.

DateHS CodeProduct DetailsNet WeightTotal Value (USD)CountryShipment PlaceBuyer
1/19/20228541290000TRANSISTOR - AN ELECTRONIC DEVICE FROM A SEMICONDUCTOR MATERIAL, USUALLY WITH THREE TERMINALS, ALLOWING INPUT SIGNALS TO CONTROL THE CURRENT IN THE ELECTRICAL CIRCUIT. COMMONLY USED FOR AMPLIFICATION, GENERATION AND CONVERSION OF ELECTRICAL SIGNALS0.81283.1ChinaMOSCOW  RUSSIASIBELKOM LOGISTIC LLC
1/29/20228541290000SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 75 W. DRAIN-SOURCE VOLTAGE 100 V. DIMENSIONS 6.35 X 5.4 X 0.95MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.0425.42ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/20/20228541290000THE TRANSISTOR, A COMPONENT USED IN THE EARTH EXPLORATION SATELLITE ELECTRONIC DEVICES, DOES NOT HAVE THE FUNCTION OF ENCRYPTION AND CRYPTOGRAPHY, NON-MILITARY PURPOSE, IS NOT A SCRAP OF ELECTRICAL EQUIPMENT0.054643.84ChinaNANJING AIRPORTEPSILON LLC
1/11/20228541290000TRANSISTORS FOR THE MANUFACTURE OF ELECTRICAL DEVICES, WITH A DISPOSIVE POWER FROM 20 TO 120 W, ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT, ARE NOT USED ON RAILWAY TRANSPORT0.28190.9ChinaHELSINKI AIRPORTPTK ARGOS ELECTRON LLC
1/28/20228541290000SEMICONDUCTOR DEVICE: N-CHANNEL TRANSISTOR. VOLTAGE DRAIN-SOURCE 20V. SCATTERING POWER 1.6W. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.014.53ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/28/20228541290000SEMICONDUCTOR DEVICES: P-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 4.24 W. DRAIN-SOURCE VOLTAGE -100 V. CONTINUOUS DRAIN CURRENT 4.6A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.017.62ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/26/20228541290000SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE. VOLTAGE COLLECTOR-EMMITTER 600V, MAXIMUM CONTINUOUS COLLECTOR CURRENT 30A. MAXIMUM POWER DISPOSION 178W. USED IN ELECTRICAL ENGINEERING0.0112.74ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/26/20228541290000SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE (IGBT). VOLTAGE COLLECTOR-EMMITTER 650V, CONTINUOUS COLLECTOR CURRENT 80A. SCATTERING POWER 283W. SIZE 20.15 X 15.75 X 5.15MM, ELECTRICAL APPLICATION0.0115.31ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/26/20228541290000SEMICONDUCTOR DEVICES N-CHANNEL TRANSISTOR. POWER DISPOSION 190W. VOLTAGE COLLECTOR-EMTTER 600V. CURRENT 33A. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING.1.151703.78ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/27/20228541290000SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: RF BIPOLAR TRANSISTOR, TYPE OF SEMICONDUCTOR: SI - SILICON0.0311.61ChinaTIF RIVER FOLLSSTOUT LLC

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