1/28/2022 | 8542326900 | FLASH-ES PROM WITH MEMORY MORE THAN 512 MB (NOT SCRAP ELECTRICAL EQUIPMENT, DO NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), CHINA | 0.05 | 157.05 | China | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/21/2022 | 8542326900 | FLASH-ES PROM WITH MEMORY MORE THAN 512 MB (NOT SCRAP ELECTRICAL EQUIPMENT, DO NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), CHINA | 0.01 | 400.06 | China | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/21/2022 | 8542326900 | MONOLITHIC ELECTRONIC INTEGRAL CIRCUITS, FLASH-ES PROM, WITH A VOLUME OF 32 GBIT, MODEL MT29F, ARTICLE MT29F32G08ABAAAWP-ITZ:A - 80 PCS. NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT WASTE. THESE PRODUCTS ARE USED IN TELECOMMUNICATION EQUIPMENT. | 0.81 | 2738.5 | Taiwan | MOSCOW RUSSIA | TIMKOM LLC |
1/27/2022 | 8542326900 | MONOLITHIC ELECTRONIC INTEGRAL CIRCUITS, FLASH-ES PROM, WITH A VOLUME OF 128 GBIT, MODEL MT29F, ARTICLE MT29F128G08AJAAAWP-ITZ:A - 175 PCS. NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT WASTE. THESE PRODUCTS ARE USED IN TELECOMMUNICATION EQUIPMENT. | 1.1 | 18551.9 | Taiwan | MOSCOW RUSSIA | TIMKOM LLC |
1/19/2022 | 8542326900 | FLASH-ES PROM WITH MEMORY MORE THAN 512 MB (NOT SCRAP ELECTRICAL EQUIPMENT, DO NOT HAVE ENCRYPTION (CRYPTOGRAPHY) FUNCTION, MALAYSIA | 0.05 | 464.14 | Malaysia | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/11/2022 | 8542326900 | MONOLITHIC INTEGRAL CHIP WITH IN-SYSTEM PROGRAMMABLE CONFIGURATION MEMORY, INTENDED FOR USE IN TELECOMMUNICATION EQUIPMENT, FOR SURFACE MOUNTING ON A PRINTED BOARD, NOT A SCRAP OF ELECTRICAL EQUIPMENT ART: | 0 | 78 | Malaysia | MOSCOW RUSSIA | SCAN ENGINEERING PROF LLC |
1/31/2022 | 8542326900 | FLASH-ES PROM WITH MEMORY MORE THAN 512 MB (NOT SCRAP ELECTRICAL EQUIPMENT, DO NOT HAVE ENCRYPTION (CRYPTOGRAPHY) FUNCTION, MALAYSIA | 0.05 | 1317.24 | Malaysia | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/23/2022 | 8542326900 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME MORE THAN 512 MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.2 | 3587.5 | South Korea | MOSCOW RUSSIA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/28/2022 | 8542326900 | MONOLITHIC ELECTRONIC INTEGRATED CIRCUITS: ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (FLASH-ES PROM) WITH A MEMORY CAPACITY FROM 512 MBIT, NOT RADIATION RESISTANT, NOT SCRAP OF ELECTRICAL EQUIPMENT | 0.85 | 26779 | Taiwan | ST PETERSBURG RUSSIA | COMPONENT LOGISTIC LLC |
1/21/2022 | 8542326900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS FOR WIDE APPLICATION IN THE MANUFACTURE OF INDUSTRIAL EQUIPMENT, NON-MILITARY PURPOSE AND HOUSEHOLD ELECTRONICS (NOT SCRAP OF ELECTRICAL EQUIPMENT). INTEGRATED. IS NOT A SPECIAL TECHNICAL TOOL FOR | 0.09 | 290.18 | Malaysia | GUANGZHOU AIRPORT CHINA | SMT AYLOGIK LLC |