1/5/2022 | 8541290000 | TRANSISTORS, EXCEPT PHOTOTRANSISTORS (NOT ELECTRICAL EQUIPMENT SCRAP) SPARE PARTS FOR PREVIOUSLY IMPORTED CERTIFIED EQUIPMENT FOR XMT 350 CC/CV WELDING MACHINES | 0.68 | 229.16 | United States of America | MOSCOW RUSSIA | IT DUBL YU WELDING PRODUCTS LLC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 216 W. VOLTAGE COLLECTOR-EMMITTER 600 V. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.05 | 44.23 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/5/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: | 0.34 | 187.96 | United States of America | SHENZHEN CHINA | ICE COMPONENTS LLC |
1/22/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 1.25 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE: SI - SILICON | 0.29 | 355.39 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/22/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 2.5 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE: SI - SILICON | 0.01 | 19.24 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/22/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 5.4 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE - SI (SILICON) | 0.03 | 642.95 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/21/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: | 2.6 | 167203.3 | United States of America | SAINT PETERSBURG RUSSIAN FEDERATION | AVTEK GROUP LLC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL TRANSISTOR. MAXIMUM POWER DISPOSION 110W. VOLTAGE DRAIN-SOURCE 60 V. CURRENT 20A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.09 | 221.46 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/18/2022 | 8541290000 | TRANSISTORS WITH A DISSISSION CAPACITY OF MORE THAN 1W FOR WIDE APPLICATIONS IN THE MANUFACTURE OF INDUSTRIAL EQUIPMENT, NON-MILITARY PURPOSE AND HOUSEHOLD ELECTRONICS (NOT SCRAP ELECTRICAL EQUIPMENT). IS NOT A SPECIAL TECHNICAL TOOL FOR TAILOR | 0.09 | 7892.26 | United States of America | WALDBRUNN GERMANY | SMT AYLOGIK LLC |
1/19/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 3 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET TRANSISTORS, SEMICONDUCTOR TYPE: SI - SILICON | 0.02 | 125.02 | United States of America | MANSFIELD CENTER | STOUT LLC |