1/13/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH A DISPERSION POWER LESS THAN 1 W, FOR MOUNTING ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 1.8 | 326.95 | China | VORONEZH ADYGEYA | NPO ENERGETICHESKAYA ELECTRONIKA LLC |
1/12/2022 | 8541210000 | KEY BIPOLAR TRANSISTORS WITH A DISPERSION POWER OF 0.9 W, INTENDED FOR INSTALLATION ON BOARDS OF PROGRAMMABLE CONTROLLERS, NOT FOR HOUSEHOLD USE, IN INDIVIDUAL PACKAGING CARTON BOX, POLYETHYLENE BAG | 0.46 | 861.99 | United States of America | MOSCOW RUSSIA | BASIS TRADE PROSOFT LLC |
1/12/2022 | 8541210000 | Transistors, except for phototransistors of dispersion capacity less than 1 W: bipolar transistor 0.25 W art: BC817-40 - 6000 pcs., Bipolar transistor 0.45 W art: BFU550A - 9000 pcs., Bipolar transistor 0.187 W art: MUN5333DW1T1G - 6000 pcs . | 0.74 | 1929.88 | China | HONG KONG | ONELEK LLC |
1/17/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH A DISPERSION POWER LESS THAN 1 W, FOR MOUNTING ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.21 | 27.4 | China | VANTAA AIRPORT | KVAZAR LLC |
1/17/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH A DISPERSION POWER LESS THAN 1 W, FOR MOUNTING ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.1 | 15.76 | China | VANTAA AIRPORT | KVAZAR LLC |
1/18/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH A DISPERSION POWER LESS THAN 1 W, FOR MOUNTING ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.23 | 16.9 | China | NARVA | ELECTRONICS IMPORT EXPORT LLC |
1/17/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH A DISPERSION POWER LESS THAN 1 W, FOR MOUNTING ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.08 | 11.06 | United States of America | VANTAA AIRPORT | KVAZAR LLC |
1/17/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH A DISPERSION POWER LESS THAN 1 W, FOR MOUNTING ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 1.77 | 702.99 | Philippines | VANTAA AIRPORT | KVAZAR LLC |
1/17/2022 | 8541210000 | SEMICONDUCTOR DEVICE: NPN/PNP-CHANNEL TRANSISTOR. POWER DISPERSION 200MW. VOLTAGE DRAIN-SOURCE 160V. CURRENT 200MA. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING. | 0.04 | 28.53 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/17/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH A DISPERSION POWER LESS THAN 1 W, FOR MOUNTING ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0 | 3.22 | United States of America | VANTAA AIRPORT | KVAZAR LLC |