1/20/2022 | 8541100009 | SEMICONDUCTOR COMPONENT - DIODE WITH SMALL VOLTAGE DROPS WHEN DIRECTLY TURNED ON - DIODE WITH SCHOTTKY BARRIER. USED IN ELECTRONIC CIRCUITS FOR PROTECTION AGAINST REVERSE CURRENT, SEMICONDUCTOR COMPONENT - POWER DIODE. USED IN ELECTRONIC CIRCUITS | 0.01 | 34.84 | China | MOSCOW RUSSIA | START XXI CENTURY LLC |
1/24/2022 | 8541100009 | NON-EMISSIVE DIODES - ELECTRONIC ELEMENTS WITH DIFFERENT CONDUCTIVITY DEPENDING ON THE DIRECTION OF THE ELECTRIC CURRENT, SEMICONDUCTOR TYPE - SILICON CARBON, ARE NOT HAZARDOUS WASTE. USED IN ELECTRICAL SYSTEMS IN PROMA | 4.2 | 777.05 | China | A P Sheremetyevo MOSCOW RF | ONEST LOGISTICS LLC |
1/27/2022 | 8541100009 | VOLTAGE LIMITER. THE PRODUCT IS A BI-DIRECTIONAL VOLTAGE LIMITER DESIGNED IN THE FORM OF A DIODE WITH A RATED BREAKDOWN VOLTAGE OF 68 V IN A SURFACE MOUNTING CASE IN A DO-214AB CASE. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. | 1.2 | 374.5 | China | EKATERENBURG | PLANAR LLC |
1/21/2022 | 8541100009 | DIODES. OPERATING PRINCIPLE: TWO-ELECTRODE ELECTRONIC DEVICE HAS DIFFERENT CONDUCTIVITY DEPENDING ON THE DIRECTION OF THE ELECTRIC CURRENT. APPLIED AS COMPONENTS FOR PRODUCTION OF SERVERS. | 0.1 | 23.76 | China | SHENZHEN CHINA | RIKOR ELECTRONICS OJSC THROUGH STS LOGISTICS LLC |
1/26/2022 | 8541100009 | SEMICONDUCTOR DEVICES: RECTIFYING ULTRA-FAST DIODES MUR840G WITH DIRECT CURRENT 8A, C MAX. DC VOLTAGE 400V. TYPE OF SEMICONDUCTOR - SILICON. | 19.64 | 2314.59 | China | ST PETERSBURG RUSSIA | ALR LLC |
1/24/2022 | 8541100009 | DIODES OTHER EXCEPT PHOTODIODES OR Light Emitting Diodes (LED): SEMICONDUCTOR DIODE, APPLICATION - HIGH SPEED SWITCHING, VOLTAGE 5.1 VOLT, DIRECT CURRENT 10 MA. REF: MMSZ4683T1G - 24000 PCS SEMICONDUCTOR DIODE, VOLTAGE 3V REF: | 5.2 | 2187.4 | China | MOSCOW RUSSIA | DIDZHIKOM LLC |
1/26/2022 | 8541100009 | DIODE. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES THE CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). THIS MAIN PROPERTIES OF THE DIODE IS USED TO CONVERT AC INTO | 65 | 6577.6 | China | VUKSI | ENERGOMERA JSC |
1/18/2022 | 8541100009 | DIODE BAS16J-115. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES THE CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). A DIODE IS A P-N JUNCTION MADE ON A SILICON CRYSTAL. | 1.61 | 574.88 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8541100009 | DIODE VS-10MQ060NTRPBF. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES THE CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). IS A PN JUNCTION MADE ON A SILICON CRYSTAL. NOT | 0.78 | 348.23 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/24/2022 | 8541100009 | DIODE VS-10MQ060NTRPBF. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). IS A PN JUNCTION MADE ON A SILICON CRYSTAL. NOT | 0.78 | 345.87 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |