1/25/2022 | 8514199000 | HIGH-TEMPERATURE FURNACE WITH A LIFTING TABLE, FOR SINTERING BLANKS FROM ZIRCONIUM DIOXIDE, IS NOT A RADIO ELECTRONIC EQUIPMENT AND HIGH-FREQUENCY DEVICE, IS NOT A SCRAP OF ELECTRICAL EQUIPMENT | 73 | 2950.58 | China | MOSCOW RUSSIA | PROFITEN LLC |
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1/27/2022 | 8506101100 | DIOXIDE-MANGANESE ALKALINE CYLINDRICAL ELEMENTS: | 48.6 | 2922.34 | China | MOSCOW RUSSIA | DURASELL RUSSIA LLC |
1/24/2022 | 8541290000 | TRANSISTOR IPD60R3K3C6ATMA1. N-CHANNEL MOSFET. THE MOS STRUCTURE CONSISTS OF A METAL AND A SEMICONDUCTOR SEPARATED BY A LAYER OF SILICON DIOXIDE (SIO2). IN THE GENERAL CASE, THE STRUCTURE IS CALLED MIS (METAL - DIELECTRIC - SEMICONDUCTOR). REPRESENTS | 1.39 | 416.1 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/2/2022 | 8506109100 | YUE MANGANESE DIOXIDE CYLINDRICAL ELEMENTS | 1151 | 1044.6 | China | DUNIN | KOVCHEG LLC |
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1/7/2022 | 8506101100 | DIOXIDE-MANGANESE ALKALINE CYLINDRICAL ELEMENTS | 4493.74 | 19478.1 | China | VOSTOCHNY MIDLANDS AIRPORT | RUMETA LLC |