1/20/2022 | 8541100009 | SILICON DIODES FOR SURFACE MOUNTING OF PRINTED BOARDS OF ELECTRIC DEVICES, INTENDED FOR USE IN ELECTRICAL SYSTEMS, SUPPLIED FOR INDUSTRIAL EQUIPMENT AS SPARE PARTS. NOT FOR ELECTRICAL EQUIPMENT, NOT FOR | 0.62 | 16.27 | China | MOSCOW RUSSIA | BAZA EK LLC |
1/25/2022 | 8541100009 | DIODE MODULE A DEVICE CONSISTING OF TWO INTERCONNECTED DIODES LOCATED IN A SINGLE PLASTIC CASE ON THE UPPER SURFACE OF THE MODULE 3 CONNECTING TERMINALS ARE LOCATED. TYPE OF SEMICONDUCTOR : SILICON, INTENDED, OPERATING PRINCIPLE: | 28.4 | 1168.7 | China | MOSCOW RUSSIA | ELLOY LLC |
1/21/2022 | 8541100009 | DIODE MODULES, SILICON, ARE TWO-ELECTRODE DEVICES WITH ONE PN JUNCTION. ARE NOT LIGHT EMITTING. THEY ARE USED IN THE PRODUCTION OF RADIO EQUIPMENT FOR GENERAL INDUSTRIAL PURPOSE ARE NOT DIODE GROUNDING. ARE NOT | 0.5 | 2615.1 | China | MOSCOW RUSSIA | PROMELKOM LLC |
1/24/2022 | 8541100009 | NON-EMISSIVE DIODES - ELECTRONIC ELEMENTS WITH DIFFERENT CONDUCTIVITY DEPENDING ON THE DIRECTION OF THE ELECTRIC CURRENT, SEMICONDUCTOR TYPE - SILICON CARBON, ARE NOT HAZARDOUS WASTE. USED IN ELECTRICAL SYSTEMS IN PROMA | 4.2 | 777.05 | China | A P Sheremetyevo MOSCOW RF | ONEST LOGISTICS LLC |
1/24/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 5.42 | 1285.71 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/25/2022 | 8541100009 | HIGH-VOLTAGE PULSE DIODES, TYPE - SILICON, FOR CONVERSION OF AC PULSE VOLTAGE INTO DC, IN A PLASTIC CASE WITH FLEXIBLE OUTPUTS, APPLIED IN POWER SOURCES OF MEDICAL X-RAY EQUIPMENT | 10 | 2522.25 | China | YIXING JIANGSU CHINA | BITRONIK LLC |
1/12/2022 | 8541100009 | DIODES, EXCEPT PHOTODIODES AND LIGHT EMITTING DIODES, NOT SCRAP OF ELECTRICAL EQUIPMENT: DIODE BRIDGE, SEMICONDUCTOR, TYPE OF SEMICONDUCTOR - SILICON, INTENDED FOR USE IN INDUSTRIAL ELECTRONICS, FOR SURFACE MOUNTING ON PRINTED BOARDS OF ORDER | 0.01 | 5.81 | China | TIF RIVER FOLLS | STOUT LLC |
1/10/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 1.35 | 322.23 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/28/2022 | 8541100009 | RECTIFYING DIODES (SILICON SEMICONDUCTOR, COMPONENT OF ELECTRICAL EQUIPMENT, BUILT IN IN MANUFACTURING; NOT HOUSEHOLD, NOT USED INDIVIDUALLY, IS NOT EQUIPMENT, NON-MILITARY PURPOSE, CIVIL USE), | 5.4 | 784 | China | M O S K V A | INTERFORWARD LLC |
1/26/2022 | 8541100009 | SCHOTTKY DIODE ASSEMBLY BAS70-05-TP CONSISTS OF TWO SILICON DIODES WITH CONNECTED CATHODES. TO EACH OF THE AREAS THERE IS OHMIC CONTACT. DIODE WITH P-N STRUCTURE. DOES NOT HAVE PHOTO SENSITIVITY. RATED VOLTAGE (V): 0-70. APPLICABLE IN | 0.2 | 34.1 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |