1/21/2022 | 8541300009 | ELECTRONIC THYRISTOR MODULE WITH TWO SERIES DIODES SKKT 323/12E | 93 | 8122 | Slovakia | NURNBERG AIRPORT | BRANCH CJSC ELECTON |
1/21/2022 | 8541300009 | DIODE-THYRISTOR MODULE, FOR MOUNTING ON A PRINTED BOARD. SUPPLIED FOR YOUR OWN USE ONLY (NOT FOR FORWARD OR RESALE) | 0.2 | 204.09 | Hungary | SAINT PETERSBURG RUSSIAN FEDERATION | IK 555 LLC |
1/21/2022 | 8541300009 | THE THYRISTOR-DIODE MODULE IS DESIGNED FOR ELECTRONIC CIRCUITS OF RECTIFIERS AND POWER REGULATORS, UNINTERRUPTIBLE POWER SUPPLY, IS A CONVERTER CONTROLLER, THE BASIS OF WHICH IS A MONOLITHIC STRUCTURE WITH | 2 | 1436.07 | Japan | NIZHNY NOVGOROD AIRPORT | ORINNOX LLC |
1/24/2022 | 8541300009 | DIODE-THYRISTOR MODULE, FOR MOUNTING ON A PRINTED BOARD. SUPPLIED FOR YOUR OWN USE ONLY (NOT FOR FORWARD OR RESALE) | 0.2 | 203.93 | Hungary | SAINT PETERSBURG RUSSIAN FEDERATION | IK 555 LLC |
1/31/2022 | 8541300009 | THYRISTOR MODULE DZ1070N18K. IS AN ASSEMBLED DIODE-THYRISTOR MODULE. IT IS USED IN A WIDE INDUSTRIAL FIELD (SOFT START DEVICES FOR ELECTRIC MOTORS, BRIDGE CONTROL CIRCUITS). IS NOT A SCRAP. VOLTAGE 1800 V 6 PCS | 10.65 | 952.22 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/31/2022 | 8541300009 | THYRISTOR MODULE DZ600N12K IS AN ASSEMBLED DIODE-THYRISTOR MODULE. IT IS USED IN A WIDE INDUSTRIAL FIELD (SOFT START DEVICES FOR ELECTRIC MOTORS, BRIDGE CONTROL CIRCUITS). IS NOT A SCRAP. VOLTAGE 1200 V 1 PC | 0.82 | 62.43 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/31/2022 | 8541300009 | THYRISTOR MODULE DZ600N12K IS AN ASSEMBLED DIODE-THYRISTOR MODULE. IT IS USED IN A WIDE INDUSTRIAL FIELD (SOFT START DEVICES FOR ELECTRIC MOTORS, BRIDGE CONTROL CIRCUITS). IS NOT A SCRAP. VOLTAGE 1200 V 5 PCS | 4.09 | 302.98 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/31/2022 | 8541300009 | THYRISTOR MODULE FZ2400R12KL4C. IS AN ASSEMBLED DIODE-THYRISTOR MODULE. IT IS USED IN A WIDE INDUSTRIAL FIELD (SOFT START DEVICES FOR ELECTRIC MOTORS, BRIDGE CONTROL CIRCUITS). IS NOT A SCRAP. VOLTAGE 1200 V CURRENT 24 | 12.56 | 1425.09 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/13/2022 | 8541300009 | SEMICONDUCTOR DEVICES (FOR DIODES, TRANSISTORS, CONVERTERS BASED ON SEMICONDUCTORS); PHOTO-SENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLVANIC CELLS, ASSEMBLED OR NOT ASSEMBLED IN MODULES, OR NOT MOUNTED | 0.01 | 53.13 | China | MOSCOW RUSSIA | RIF GROUP LLC |
1/13/2022 | 8541300009 | SEMICONDUCTOR DEVICES (FOR DIODES, TRANSISTORS, CONVERTERS BASED ON SEMICONDUCTORS); PHOTO-SENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLVANIC CELLS, ASSEMBLED OR NOT ASSEMBLED IN MODULES, OR NOT MOUNTED | 0.01 | 49.06 | China | MOSCOW RUSSIA | RIF GROUP LLC |