1/28/2022 | 8541100009 | SEMICONDUCTOR DEVICES: TVS DIOD. MAXIMUM LOCKING VOLTAGE 17 V. PEAK PULSE CURRENT 150A. DIMENSIONS 5 X 4 X 1.5MM. USED IN ELECTRICAL ENGINEERING | 0.3 | 669.81 | Philippines | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541410002 | SEMICONDUCTOR DEVICES: LEDS ON A RIGID PRINTED BOARD WITHOUT SEMICONDUCTOR ELEMENTS REQUIRED FOR IGNITION AND STABLE OPERATION OF LEDS. WHITE LIGHT. VOLTAGE 3.2 V. DIMENSIONS 5 X 8.3MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. PRIM | 0.01 | 4.18 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 96 W. VOLTAGE DRAIN-SOURCE +/-20V. CURRENT 100A. DIMENSIONS 6.1 X 5.35 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 23.54 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL TRANSISTOR. MAXIMUM POWER DISPOSION 110W. VOLTAGE DRAIN-SOURCE 60 V. CURRENT 20A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.09 | 221.46 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL MOSFET TRANSISTOR. USED IN ELECTRICAL ENGINEERING. VOLTAGE Drain-SOURCE 500V, CURRENT 48A. SCATTERING POWER 500W. DIMENSIONS: 19.96 X 5.13 X 26.16MM. HIPERFET SERIES | 0.03 | 60.3 | Germany | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541100009 | SEMICONDUCTOR DEVICES: SCHOTTKY DIODE. MAXIMUM REVERSE REPEATED VOLTAGE 650V, CONSTANT FORWARD CURRENT 30A. DIMENSIONS: 10.41 X 15.62 X 4.69MM. USED IN ELECTRICAL ENGINEERING | 0 | 5.82 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541600000 | QUARTZ RESONATOR (ASSEMBLED PIEZOELECTRIC CRYSTALS), IN A SINGLE CASE (FOR SURFACE MOUNTING), TO CREATE ELECTRIC PULSES OF A CERTAIN FREQUENCY. OUTPUT SIGNAL FREQUENCY 11.0592 MHz. DIMENSIONS: 10.77 X 4.34 X 3.5MM. ARE NOT L | 0.17 | 16.97 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 75 W. DRAIN-SOURCE VOLTAGE 100 V. DIMENSIONS 6.35 X 5.4 X 0.95MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.04 | 25.42 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541600000 | QUARTZ RESONATOR (ASSEMBLED PIEZOELECTRIC CRYSTALS), FOR CREATING ELECTRIC PULSES OF A CERTAIN FREQUENCY. WORKING FREQUENCY: 8MHZ. DIMENSIONS: 8 X 5.5 X 3MM. CSTLS SERIES. USED IN ELECTRICAL ENGINEERING | 0 | 1.98 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541600000 | QUARTZ RESONATOR (PIEZOELECTRIC ASSEMBLED CRYSTALS) FOR MOUNTING ON THE BOARD. TO CREATE ELECTRIC PULSES OF A CERTAIN FREQUENCY. USED IN ELECTRICAL ENGINEERING. OUTPUT SIGNAL FREQUENCY 8 MHZ. WORKING VOLTAGE 2.7-3.6V. DIMENSIONS: 7 X 5 X 1 | 0.04 | 14.67 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |