1/12/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 64MBIT; NAPR | 0.67 | 4256.48 | Philippines | HONG KONG | VEST OST LLC |
1/27/2022 | 8542326100 | MONOLITHIC DIGITAL INTEGRATED CIRCUITS FOR INSTALLATION IN ELECTRONIC BOARDS, STORAGE DEVICES, FLASH-ES PROM WITH A MEMORY CAPACITY NOT BOL. 512 Mbps, NO ENCRYPTION AND CRYPTOGRAM, NOT RADIATION RESISTANT, NON MILITARY USE. | 0.23 | 135.55 | Singapore | MUNICH AIRPORT | TD KTC INLINE GROUP LLC |
1/27/2022 | 8542326100 | MONOLITHIC DIGITAL INTEGRATED CIRCUITS FOR INSTALLATION IN ELECTRONIC BOARDS, STORAGE DEVICES, FLASH-ES PROM WITH A MEMORY CAPACITY NOT BOL. 512 Mbps, NO ENCRYPTION AND CRYPTOGRAM, NOT RADIATION RESISTANT, NON MILITARY USE. | 0.81 | 2069.62 | Singapore | MUNICH AIRPORT | TD KTC INLINE GROUP LLC |
1/12/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 32MBIT; NAPR | 0.48 | 2894.38 | Taiwan | HONG KONG | VEST OST LLC |
1/12/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 4MBIT; DIRECTLY | 0.03 | 49.55 | Japan | HONG KONG | VEST OST LLC |
1/19/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 32MBIT; NAPR | 0.12 | 948.51 | China | HONG KONG | VEST OST LLC |