1/12/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM (NOR) MEMORY DEVICE WITH A MEMORY OF 2 GBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 87.66 | Thailand | ST PETERSBURG RUSSIA | VOSTOK JSC |
1/26/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE FLASH EEPROM (NAND) WITH MEMORY 8 GBIT. (OPERATING TEMPERATURE RANGE: -40...+105 ?) (NOT HAZARDOUS WASTE) | 0.01 | 83.31 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/24/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF FLASH-ESPZU TYPE (EMMC FLASH DRIVE) WITH MEMORY 4 GBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.06 | 128.15 | South Korea | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/31/2022 | 8542326900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, INTENDED FOR MOUNTING ON PRINTED BOARDS OF ELECTRONIC DEVICES, NOT FOR FIRE AUTOMATICS, NON MILITARY PURPOSE, NOT SCRAP OF ELECTRICAL EQUIPMENT | 0.52 | 9695.18 | China | SHENZHEN CHINA | ICE COMPONENTS LLC |
1/31/2022 | 8542326900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, INTENDED FOR MOUNTING ON PRINTED BOARDS OF ELECTRONIC DEVICES, NOT FOR FIRE AUTOMATICS, NON MILITARY PURPOSE, NOT SCRAP OF ELECTRICAL EQUIPMENT | 0.34 | 363.84 | China | SHENZHEN CHINA | ICE COMPONENTS LLC |
1/17/2022 | 8542326900 | ELECTRONICALLY ERASABLE PROGRAMMEABLE PERMANENT MEMORY DEVICE WITH A MEMORY CAPACITY OF MORE THAN 512 MBIT, COMPONENTS FOR REPAIR AND MAINTENANCE OF ELECTRONIC EQUIPMENT AND DEVICES. | 0.34 | 464.9 | Taiwan | MOSCOW RUSSIA | RADIOFID SYSTEMS LLC |
1/19/2022 | 8542326900 | ELECTRICALLY ERASURE REPROGRAMMABLE SINGLE-CRYSTAL MEMORY DEVICES DO NOT CONTAIN CRYPTOGRAPHIC FUNCTIONS FOR PRODUCTION OF EL. CIVIL MODULES: | 0.45 | 12999.1 | Malaysia | ST PETERSBURG RUSSIA | DEVICE CONSULTING LLC |
1/31/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM (NOR) MEMORY DEVICE WITH A MEMORY OF 2 GBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 166 | Thailand | ST PETERSBURG RUSSIA | VOSTOK JSC |
1/17/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A MEMORY DEVICE (CONFIGURATION MEMORY) OF THE FLASH-EEPROM TYPE WITH A VOLUME OF 8 GBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.17 | 969.56 | Taiwan | LEIPZIG AIRPORT | VOSTOK JSC |
1/15/2022 | 8542326900 | INTEGRATED MONOLITHIC CIRCUITS - ELECTRICALLY ERASABLE, REPROGRAMMABLE, PERMANENT STORAGE DEVICES OF NAND FLASH TYPE, VOLUME OF 128 GB. SLC CONFIGURATION, 0.11 A ACTIVE CURRENT, 50 MB/s AVERAGE READ, 50 M AVERAGE WRITE | 2 | 35379.9 | Taiwan | HONGKONG AIRPORT | AKROL LLC |