1/11/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY OF NO MORE THAN 512 MBIT, INTEGRATED MONOLITHIC CIRCUIT WITH THE FUNCTION OF EEPROM-MEMORY, FIELD OF APPLICATION-USED IN FIBER-OPTIC DEVICES, (NON-MILITARY PURPOSES), : | 2.12 | 5611.64 | Taiwan | MOSCOW RUSSIA | SCIENTIFIC AND TECHNICAL ASSOCIATION IRE POLYUS LLC |
1/21/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FLASH EEPROM (NOR) STORAGE DEVICE WITH MEMORY 32 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0 | 85.95 | Taiwan | ST PETERSBURG RUSSIA | ALKON ELECTRONICS LLC |
1/24/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT FOR MOUNTING ON PRINTED BOARDS OF ELECTRONIC DEVICES, DESIGNED FOR INDUSTRIAL ELECTRONICS SYSTEMS, DOES NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT FOR MILITARY PURPOSE, NOT RADIATION RESISTANT, NOT SCRAP | 0.08 | 116.32 | Taiwan | IZHEVSK KIYASOVO | ELITAN TRADE LLC |
1/21/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT FOR MOUNTING ON PRINTED BOARDS OF ELECTRONIC DEVICES, DESIGNED FOR INDUSTRIAL ELECTRONICS SYSTEMS, DOES NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT FOR MILITARY PURPOSE, NOT RADIATION RESISTANT, NOT SCRAP | 0.05 | 51.2 | Taiwan | IZHEVSK KIYASOVO | ELITAN TRADE LLC |
1/6/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE - FLASH EEPROM (PPVM - CONFIGURATION MEMORY) WITH A MEMORY CAPACITY OF 64 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.32 | 1350.74 | Taiwan | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRATED STORAGE DEVICES ELECTRICALLY ERASEABLE COMPLETELY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY VOLUME OF 16 MBIT FOR USE IN INDUSTRIAL ELECTRIC | 0.38 | 114.75 | Taiwan | EKATERENBURG | VEST OST LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE FLASH EEPROM WITH MEMORY 32 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.02 | 24.62 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRATED MONOLITHIC SINGLE-CRYSTAL ASSEMBLED, ELECTRICALLY ERASE REPROGRAMMABLE PERMANENT MEMORY DEVICES, FLASH-ES PROM WITH MEMORY MAXIMUM 512 MBIT, NOT WASTE, NOT SCRAP, MEMORY CAPACITY2 | 0.5 | 1203.7 | Taiwan | VANTAA AIRPORT | GAMMA LIMITED LLC |
1/31/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS: ELECTRICALLY ERASURE REPROGRAMMABLE PERMANENT MEMORY DEVICES FLASH-ES PROM, FOR MOUNTING ON PRINTED BOARDS, WITHOUT THE CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS, NON-MILITARY USE | 1 | 1770.82 | Taiwan | TAICHUNG PORT OF TAIWAN CHINA | MT SYSTEMS LLC |
1/12/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 32MBIT; NAPR | 0.48 | 2894.38 | Taiwan | HONG KONG | VEST OST LLC |