1/19/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES MRAM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 1 Mbit FOR USE IN PERSONAL COMPUTERS. | 1.11 | 9743.1 | China | MOSCOW RUSSIA | SIBELKOM LOGISTIC LLC |
1/24/2022 | 8542326100 | ELECTRONIC INTEGRATED CIRCUITS, REPRESENTING MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT - FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF NO MORE THAN 512MBIT, FOR USE IN HOUSEHOLD | 1.47 | 696 | China | EKATERENBURG | VEST OST LLC |
1/6/2022 | 8542326100 | DRK ELECTRONIC IC INTEGRAL / (MONOLITHIC - STORAGE DEVICE (CONFIGURATION \\ MEMORY) TYPE # ^ FLASH EEPROM C WITH 16 Mbit. (OPERATING TEMPERATURE RANGE: -40 ... +85 C) (NOT HAZARDOUS WASTE) | 0.03 | 54.25 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/6/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM STORAGE DEVICE WITH A MEMORY CAPACITY OF 128 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.11 | 272.01 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/11/2022 | 8542326100 | ELECTRONIC INTEGRATED ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY DEVICES (FLASH-ES PROM) WITH A MEMORY CAPACITY NOT MORE THAN 512 Mbit. DO NOT CONTAIN ENCRYPTION (CRYPTOGRAPHIC) DEVICES. DESIGNED FOR MOUNTING ON THE PRINT | 0.31 | 320.2 | China | EKATERENBURG | VEST OST LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM (NOR) MEMORY DEVICE WITH A MEMORY CAPACITY OF 256 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C)(NOT HAZARDOUS WASTE) | 0.07 | 365.37 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A MEMORY DEVICE (CONFIGURATION MEMORY) OF THE FLASH-EEPROM TYPE WITH A VOLUME OF 4 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.04 | 42.05 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM TYPE STORAGE DEVICE WITH A MEMORY CAPACITY OF 512 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.08 | 969.76 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE (FPVM-CONFIGURATION MEMORY) OF FLASH-EEPROM TYPE WITH MEMORY SIZE OF 64 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 64.19 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE (FPVM-CONFIGURATION MEMORY) OF FLASH-EEPROM TYPE WITH MEMORY SIZE OF 64 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.25 | 348.47 | China | SINGAPORE AIRPORT | SVARNOY LLC |