1/27/2022 | 8542323100 | STORAGE DEVICES FOR USE IN ELECTRONIC EQUIPMENT (THAT DO NOT HAVE THE FUNCTION OF CRYPTOGRAPHY ENCRYPTION, NOT SCRAP OF ELECTRICAL EQUIPMENT, WITHOUT CONTAINING PRECIOUS METALS). DESIGNED FOR INDUSTRIAL ASSEMBLY: SEE APPENDIX | 16.14 | 7651.9 | United States of America | MOSCOW RUSSIA | DIDZHIKOM LLC |
1/27/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 0.11 | 292.3 | United States of America | MOSCOW RUSSIA | CJSC NETWORK TECHNOLOGIES |
1/28/2022 | 8542323100 | DYNAMIC RANDOM STORAGE DEVICES (DOSES) WITH A MEMORY CAPACITY NOT MORE THAN 512 MB: | 0.22 | 341.89 | United States of America | MOSCOW RUSSIA | EMC EXPERT LLC |
1/26/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 0.07 | 192.56 | United States of America | MOSCOW RUSSIA | CJSC NETWORK TECHNOLOGIES |
1/26/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 0.05 | 153.4 | United States of America | MOSCOW RUSSIA | CJSC NETWORK TECHNOLOGIES |
1/26/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 0.04 | 119.96 | United States of America | MOSCOW RUSSIA | CJSC NETWORK TECHNOLOGIES |
1/27/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT: | 0.16 | 461.41 | United States of America | HONG KONG | BALTELECTRON LLC |
1/18/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT: | 0 | 37.18 | United States of America | HONG KONG | BALTELECTRON LLC |