1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL MOSFET TRANSISTOR. USED IN ELECTRICAL ENGINEERING. VOLTAGE Drain-SOURCE 500V, CURRENT 48A. SCATTERING POWER 500W. DIMENSIONS: 19.96 X 5.13 X 26.16MM. HIPERFET SERIES | 0.03 | 60.3 | Germany | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/27/2022 | 8541290000 | TRANSISTORS, EXCEPT PHOTOTRANSISTORS: A THREE-ELECTRODE POWER SEMICONDUCTOR DEVICE COMBINING TWO TRANSISTORS IN ONE SEMICONDUCTOR STRUCTURE: BIPOLAR AND FIELD. POWER DISPOSION 1660 W. NOT MILITARY PURPOSE, NOT SCRAP | 16 | 2972.07 | Germany | SHENZHEN CHINA | SPARK TT LLC |
1/18/2022 | 8541290000 | MONOLITHIC TRANSISTOR MICROCIRCUIT BASED ON METAL-OXIDE-SEMICONDUCTOR STRUCTURE. USED IN ELECTRONIC DEVICES IN POWER MANAGEMENT SCHEMES. | 0.69 | 3789 | Germany | MOSCOW RUSSIA | START XXI CENTURY LLC |
1/12/2022 | 8541290000 | TRANSISTOR MODULES, WITH A DISPOSIVE POWER MORE THAN 1W. DESIGNED FOR FREQUENCY CONVERTERS, ELECTRIC MOTOR SPEED CONTROL DEVICES; TYPE OF SEMICONDUCTORS SILICON; | 35.66 | 10842.9 | Germany | Nuremberg Germany | CORPORATION IP N LLC |
1/29/2022 | 8541290000 | TRANSISTOR MODULES, WITH A DISPOSIVE POWER MORE THAN 1W. DESIGNED FOR FREQUENCY CONVERTERS, ELECTRIC MOTOR SPEED CONTROL DEVICES; TYPE OF SEMICONDUCTORS SILICON; | 63 | 12672.6 | Germany | Nuremberg Germany | CORPORATION IP N LLC |
1/17/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES, NON-MILITARY PURPOSE: | 0.01 | 261.49 | Germany | SHENZHEN CHINA | ICE COMPONENTS LLC |