1/31/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 128 Mbps AND A FREQUENCY OF UP TO 532 MHz WITH SUPPORT FOR DATA TRANSFER VIA SPI INTERFACE. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN THE CASE | 0.09 | 240.87 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/31/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUIT. THE PRODUCT IS A 256 Mbit FLASH MEMORY WITH AN OPERATING FREQUENCY OF UP TO 532 MHz AND A DATA TRANSFER RATE OF UP TO 66 MB/S VIA SPI INTERFACE. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 | 0.01 | 9.6 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/19/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 16 MB AND A DATA READ TIME OF 70 NS. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A TSOP CASE WITH 48 CONTACTS. IS NOT A SCRAP | 0.33 | 108.29 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 16 MB AND A DATA READ TIME OF 70 NS. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A WFBGA CASE WITH 48 CONTACTS. | 1.59 | 4325.64 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/19/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 16 MB AND A DATA READ TIME OF 70 NS. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A TSOP CASE WITH 48 CONTACTS. IS NOT A SCRAP | 0.14 | 33.11 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/17/2022 | 8542326100 | FLASH ELECTRIC ERASABLE REPROGRAMMABLE PERMANENT RECORDERS WITH A MEMORY CAPACITY NOT MORE THAN 512 Mbit, FOR DATA STORAGE. SUPPLIED FOR | 0.78 | 3299.9 | Malaysia | MOSCOW RUSSIA | RADIOFID SYSTEMS LLC |
1/25/2022 | 8542326100 | ELECTRONIC MEMORY MODULE (FLASH-ES PROM), VOLUME 512 Mbit, FOR DATA STORAGE SYSTEMS OF AUTOMATED CONTROL SYSTEMS OF DIESEL ENGINES, NON-MILITARY PURPOSE; | 0.01 | 209.62 | Germany | UEBERLINGEN | MTU RUS LLC |
1/13/2022 | 8542326100 | MONOLITHIC INTEGRAL MICROCIRCUIT AT25SF161B-SSHB-T - FLASH MEMORY NOR. DESIGNED FOR ELECTRICITY CONSUMPTION CONTROL EQUIPMENT. TECHNICAL DATA: MEMORY 16 MBIT, SUPPLY VOLTAGE 2.5 - 3.6 V, MAXIMUM CLOCK SPEED 104 MHZ, D | 3.5 | 3524.77 | Philippines | KIRCHHEIM BEI MUNCHEN GERMANY | SCANTI LLC |