1/12/2022 | 8523511000 | NON-RECORDED (UNWRITTEN) FLASH MEMORY CARDS (USB STORAGE DRIVES) - SOLID-STATE NON-VOLIGIOUS SEMICONDUCTOR ELECTRONIC DATA STORAGE DEVICES EQUIPPED WITH A USB CONNECTOR | 8 | 1502.4 | China | MOSCOW RUSSIA | FORMULA LLC |
1/12/2022 | 8523511000 | NON-RECORDED (UNWRITTEN) FLASH MEMORY CARDS (USB STORAGE DRIVES) - SOLID-STATE NON-VOLIGIOUS SEMICONDUCTOR ELECTRONIC DATA STORAGE DEVICES EQUIPPED WITH A USB CONNECTOR | 8.5 | 2877.4 | China | MOSCOW RUSSIA | FORMULA LLC |
1/12/2022 | 8523511000 | NON-RECORDED (UNWRITTEN) FLASH MEMORY CARDS (USB STORAGE DRIVES) - SOLID-STATE NON-VOLIGIOUS SEMICONDUCTOR ELECTRONIC DATA STORAGE DEVICES EQUIPPED WITH A USB CONNECTOR | 6.6 | 1832.4 | China | MOSCOW RUSSIA | FORMULA LLC |
1/27/2022 | 8523511000 | NON-WRITING DATA STORAGE DEVICE (USB DRIVE) WITH A MEMORY CAPACITY OF 32 GB, IN THE FORM OF A SOLID-STATE NON-VARIOUS DATA STORAGE DEVICE WITH A CONNECTING USB CONNECTOR, CONTAINING A FLASH MEMORY DEVICE IN THE FORM OF | 0.03 | 70.84 | China | MOSCOW RUSSIA | RATSIONAL RUS LLC |
1/31/2022 | 9022900000 | COMPUTER X-RAY TOMOGRAPH SOMATOM DEFINITION FLASH/NON MILITARY PURPOSE, NOT SCRAP ELECTRICAL EQUIPMENT, NOT SOD. RADIO-ELECTRONIC DATA TRANSMISSION UNITS, NOT SOD. RADIOACTIVE SOURCE: | 22.5 | 8505.69 | Germany | MOSCOW RUSSIA | Siemens Zdravookhranenie LLC |
1/27/2022 | 8471709800 | FLASH DRIVE STORAGE: DISK SYSTEM INCLUDED: FA-XR2-32G-FC-SFP-SR 8-PACK (80-1193-00) 1 PC. SET OF 8 OPTICAL I/O TRANSCEIVERS FC 32G, FA-X50R3-FC-127TB-91/36-EMEZZ-NE 1 PC DATA STORAGE SYSTEM ON FLASH MODULES | 65.7 | 200132.9 | United States of America | MOSCOW RUSSIA | OPEN COMPUTER SOLUTIONS LLC |
1/31/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 128 Mbps AND A FREQUENCY OF UP TO 532 MHz WITH SUPPORT FOR DATA TRANSFER VIA SPI INTERFACE. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN THE CASE | 0.09 | 240.87 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/31/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUIT. THE PRODUCT IS A 256 Mbit FLASH MEMORY WITH AN OPERATING FREQUENCY OF UP TO 532 MHz AND A DATA TRANSFER RATE OF UP TO 66 MB/S VIA SPI INTERFACE. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 | 0.01 | 9.6 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/31/2022 | 8542326900 | ELECTRONIC INTEGRAL CIRCUIT. THE PRODUCT IS A 2 GB FLASH MEMORY WITH A DATA TRANSMISSION BUS OF 8 BIT AND A READ/WRITE TIME OF 20 NS. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A SOT C 48 CASE | 2.2 | 5938.5 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/19/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 16 MB AND A DATA READ TIME OF 70 NS. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A TSOP CASE WITH 48 CONTACTS. IS NOT A SCRAP | 0.33 | 108.29 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |