1/21/2022 | 8541100009 | RECTIFYING SCHOTTKY DIODE BASED ON SILICON CARBIDE. REPEATED PEAK VOLTAGE UP TO 1200V, CURRENT UP TO 20A. FOR GENERAL APPLICATIONS IN ELECTRONICS. | 0.49 | 235.68 | Philippines | YEKATERINBURG KOLTSOVO AIRPORT | URAL IMPORTER LIMITED |
1/21/2022 | 8541290000 | MOSFET TRANSISTOR BASED ON SILICON CARBIDE. WORK VOLTAGE 1200V. POWER DISSIPATION: 228W. FOR USE IN DC INVERTERS, CHARGERS. | 2.41 | 3308.48 | Malaysia | YEKATERINBURG KOLTSOVO AIRPORT | URAL IMPORTER LIMITED |
1/21/2022 | 8541100009 | SCHOTTKY DIODE. TYPE OF SEMICONDUCTOR: SILICON CARBIDE. DIRECT CURRENT 12A. WORK VOLTAGE 650V. POWER DISSIPATION 138W. FOR APPLICATION IN SWITCHED POWER SUPPLIES, SOLAR INVERTERS, UNINTERRUPTIBLE POWER SOURCES. | 1.35 | 7158.84 | Malaysia | YEKATERINBURG KOLTSOVO AIRPORT | URAL IMPORTER LIMITED |
1/10/2022 | 8516808000 | SILICON CARBIDE HEATING RESISTANCES IN THE FORM OF RODS, WITHOUT INSULATED BODY, INCLUDED WITH CONNECTION WIRES. SUITABLE FOR INSTALLATION IN ELECTRIC INDUSTRIAL FURNACES. IMPORTED FOR OWN NEEDS. | 12.5 | 1364.4 | China | ZHENGZHOU AIRPORT | INTELL LLC |
1/6/2022 | 8516808000 | TUBULAR HEATING ELEMENTS FROM SILICON CARBIDE (ELECTRIC HEATING RESISTANCE WITHOUT INSULATED FRAME), DIMENSIONS ?30 X 1200 MM. APPLIED FOR INSTALLATION IN THE HEATING FURNACE OF THE CASTING MACHINE, DESIGNED FOR HEATING AND | 72 | 1100.94 | China | QINHUANGDAO CHINA | ST GROUP LLC |
1/27/2022 | 8541290000 | SILICON CARBIDE N-CHANNEL MOSFET TRANSISTORS (MOSFET). THEY ARE CONTROLLED BY THE ELECTRIC FIELD THAT IS CREATED BY THE VOLTAGE APPLIED TO THE GATE RELATIVE TO THE SOURCE. NOT SCRAP OF ELECTRICAL EQUIPMENT. | 0 | 796.12 | China | ST LAURENT BLANGY FRANCE | DKM GROUP LLC |
1/21/2022 | 8541100009 | SCHOTTKY DIODE BASED ON SILICON CARBIDE. WORKING VOLTAGE 650V. CURRENT 50A. POWER DISSIPATION UP TO 429 W. FOR USE IN ELECTRONICS, SOLAR POWER SUPPLY SYSTEMS, POWER CIRCUIT; SCHOTTKY DIODE BASED ON SILICON CARBIDE. OPERATING VOLTAGE 17 | 4.11 | 2939.34 | China | YEKATERINBURG KOLTSOVO AIRPORT | URAL IMPORTER LIMITED |
1/21/2022 | 8541290000 | FIELD TRANSISTOR MODULES (MOS) WITH DISPOSIVE POWER UP TO 228 W. OPERATING VOLTAGE 1200V DC. TYPE OF SEMICONDUCTOR: SILICON CARBIDE. USED IN SOLAR ENERGY, INDUSTRIAL UNINTERRUPTIBLE POWER SYSTEMS, CHARGERS | 9.17 | 5550.21 | China | YEKATERINBURG KOLTSOVO AIRPORT | URAL IMPORTER LIMITED |
1/21/2022 | 8516808000 | ELECTRIC HEATING RESISTERS (UNMOUNTED WITH FRAME), WITHOUT PRECED METAL CONTENT: SILICON CARBIDE HEATERS (CEC) ARE USED FOR HIGH TEMPERATURE HEATING IN VARIOUS INDUSTRIAL AND LABORATORY FURNACES FOR GLASS PROCESSING | 117 | 1864.5 | China | QINGDAO CHINA | CENTER FOR SUPPORT OF CASTING LLC |
1/20/2022 | 8541410004 | LIGHT EMITTING DIODES (LED) FOR BOARD MOUNTING. WITHOUT POWER SUPPLY. WITHOUT POWER CORD. WITHOUT SWITCH. FOR VOLTAGE 3 VOLT. NOT ORGANIC LEDS. INDIUM GALLIUM NITRIDE (INGAN) CRYSTAL, SILICON CARBIDE (SIC) SUBSTRATE. RADIOACTIVE SOURCES | 5.7 | 20798.1 | Malaysia | MOSCOW RUSSIA | MICROEM JSC |