1/31/2022 | 8542329000 | SINGLE-TIME PROGRAMMABLE PERMANENT STORAGE DEVICES WITH A CAPACITY OF 2 MB, WITHOUT THE FUNCTION OF ENCRYPTION AND CRYPTOGRAM, IN THE FORM OF SILICON WAVE WITH APPLIED CMOS - STRUCTURES, NOT CUT TO CRYSTALS, MLDR100_REV3_V2 | 1.7 | 507378.3 | Malaysia | MOSCOW RUSSIA | PKK MILANDR JSC |
1/21/2022 | 8542329000 | MONOLITHIC INTEGRAL CIRCUIT: FPVM MEMORY (CONFIGURATION MEMORY) WITH A MEMORY CAPACITY OF 1 MBIT, VOLTAGE 3.3 V, OPERATING FREQUENCY 33 MHz, OPERATING TEMPERATURE 0 GR.TS TO + 70 GR.TS. DESIGNED FOR SURFACE MOUNTING ON PRINTED | 0.98 | 9109.61 | Philippines | MUNSTER GERMANY | PRIUS ELECTRONICS LLC |
1/12/2022 | 8542329000 | MEMORY DEVICE - FERROELECTRIC MEMORY (FRAM) WITH RANDOM ACCESS, REPRESENTING A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, WITH A MEMORY CAPACITY OF 254 KBIT, FOR INSTALLATION ON A PRINTED INDUSTRIAL PLATE | 0.06 | 504.92 | South Korea | HONG KONG | VEST OST LLC |
1/24/2022 | 8542329000 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MAGNETORESISTIVE RANDOM MEMORY (MRAM), WITH A MEMORY CAPACITY OF 1 Mbit. | 0.03 | 88.79 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/14/2022 | 8542329000 | ELECTRONIC INTEGRATED SCHEMES - FERROELECTRIC NON-VARIOUS RAM FM25CL64B-GTR CAPACITY 64 KBIT. | 7.84 | 13600.1 | Thailand | ST PETERSBURG RUSSIA | ALR LLC |