1/18/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT: | 0.01 | 12.72 | Japan | MOSCOW RUSSIA | BALTELECTRON LLC |
1/27/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 0.11 | 292.3 | United States of America | MOSCOW RUSSIA | CJSC NETWORK TECHNOLOGIES |
1/28/2022 | 8542323100 | DYNAMIC RANDOM STORAGE DEVICES (DOSES) WITH A MEMORY CAPACITY NOT MORE THAN 512 MB: | 0.22 | 341.89 | United States of America | MOSCOW RUSSIA | EMC EXPERT LLC |
1/26/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 0.07 | 192.56 | United States of America | MOSCOW RUSSIA | CJSC NETWORK TECHNOLOGIES |
1/26/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 0.05 | 153.4 | United States of America | MOSCOW RUSSIA | CJSC NETWORK TECHNOLOGIES |
1/26/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 0.04 | 119.96 | United States of America | MOSCOW RUSSIA | CJSC NETWORK TECHNOLOGIES |
1/26/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 5.64 | 20983.8 | Taiwan | MOSCOW RUSSIA | START XXI CENTURY LLC |
1/26/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 0.59 | 651.02 | Taiwan | MOSCOW RUSSIA | START XXI CENTURY LLC |
1/26/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 0.54 | 2235.8 | Taiwan | MOSCOW RUSSIA | START XXI CENTURY LLC |
1/11/2022 | 8542323100 | ELECTRONIC INTEGRATED MONOLITHIC DIGITAL - DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF 4 MBIT, FOR A SUPPLY VOLTAGE OF 1.8 - 3.6 V, OBTAINED USING CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMI-WIRE) | 0.06 | 480.25 | Thailand | HONG KONG | KOMPOTRADE LLC |