1/19/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS, DO NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT FOR CLEAR OBTAINING OF INFORMATION, NON MILITARY PURPOSES, FLASH-ES PROM WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbit: | 2.4 | 3208.72 | United States of America | MOSCOW RUSSIA | EMC EXPERT LLC |
1/27/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 0.11 | 292.3 | United States of America | MOSCOW RUSSIA | CJSC NETWORK TECHNOLOGIES |
1/28/2022 | 8542323100 | DYNAMIC RANDOM STORAGE DEVICES (DOSES) WITH A MEMORY CAPACITY NOT MORE THAN 512 MB: | 0.22 | 341.89 | United States of America | MOSCOW RUSSIA | EMC EXPERT LLC |
1/26/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 0.07 | 192.56 | United States of America | MOSCOW RUSSIA | CJSC NETWORK TECHNOLOGIES |
1/26/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 0.05 | 153.4 | United States of America | MOSCOW RUSSIA | CJSC NETWORK TECHNOLOGIES |
1/26/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT | 0.04 | 119.96 | United States of America | MOSCOW RUSSIA | CJSC NETWORK TECHNOLOGIES |
1/27/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT: | 0.16 | 461.41 | United States of America | HONG KONG | BALTELECTRON LLC |
1/30/2022 | 8542323900 | ELECTRONIC INTEGRATED, DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF MORE THAN 512 MBIT CONTAINS CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT SCRAP EQUIPMENT, DRAM MEMORY, MEMORY SIZE: 2 GBIT, VOLTAGE: 1.7-9 | 0.02 | 622.29 | United States of America | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/18/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSE) WITH A MEMORY CAPACITY NOT MORE THAN 512 MIBIT: | 0 | 37.18 | United States of America | HONG KONG | BALTELECTRON LLC |
1/19/2022 | 8542326100 | ELECTRONIC INTEGRATED STORAGE DEVICES ELECTRICALLY ERASEABLE COMPLETELY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 4 MBIT FOR USE IN INDUSTRIAL ELECTRIC | 0.06 | 345.18 | United States of America | HONG KONG | VEST OST LLC |