1/15/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, FOR MOUNTING ON A PRINTED BOARD, ARE USED AS ACCESSORIES IN THE CIVIL RADIO ELECTRONIC INDUSTRY. DO NOT BE A SCRAP OF ELECTRICAL EQUIPMENT. DO NOT HAVE ENCRYPTION FUNCTIONS AND | 0.01 | 75.22 | China | MOSCOW RUSSIA | VTF GROUP LLC |
1/15/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, FOR MOUNTING ON A PRINTED BOARD, ARE USED AS ACCESSORIES IN THE CIVIL RADIO ELECTRONIC INDUSTRY. DO NOT BE A SCRAP OF ELECTRICAL EQUIPMENT. DO NOT HAVE ENCRYPTION FUNCTIONS AND | 0.01 | 78.16 | China | MOSCOW RUSSIA | VTF GROUP LLC |
1/23/2022 | 8542323900 | INTEGRATED, MONOLITHIC, DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF MORE THAN 512 MBIT, WITHOUT A FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT A SCRAP OF ELECTRICAL EQUIPMENT, ACCESSORIES FOR INDUSTRIAL ASSEMBLY ASSEMBLY | 1.15 | 1116.55 | Taiwan | TAIPEI AIRPORT TAIWAN | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/27/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF NO MORE THAN 512 MIBIT (UP TO 16 MIBIT OF FLASH-MEMORY), INTENDED FOR MOUNTING ON A PRINTED BOARD, APPLIED AS ACCESSORIES IN THE CIVIL RADIOELECTRON | 0.01 | 95.17 | China | HONG KONG | TIMOK LLC |