1/10/2022 | 8542324500 | ELECTRONIC INTEGRATED SCHEMES - RAM MEMORY DEVICES WITH A CAPACITY OF 16 Mbit WITHOUT THE FUNCTION OF ENCRYPTION / CRYPTOGRAPHY - SILICON WATER WITH APPLIED CMOS STRUCTURES AND COPPER CONDUCTORS APPLIED ACCORDING TO DRAWING ACB1-01-017 | 2.3 | 708724.2 | China | MOSCOW RUSSIA | PKK MILANDR JSC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 46.1 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 49.4 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 47.2 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 55 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 44.15 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 45.08 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/20/2022 | 8542324500 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.03 | 623.49 | China | PRAGUE | URAL TELECOM SYSTEMS LLC |
1/21/2022 | 8542324500 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.02 | 170.3 | China | PRAGUE | URAL TELECOM SYSTEMS LLC |
1/22/2022 | 8542324500 | STATIC Random Access Memory (SOZU). FERROELECTRIC RAM (FRAM) MEMORY, 256 KB (32 K*8) | 2.9 | 5271.03 | China | SHANGHA CHINA | MIRTEK LLC |