1/11/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. DOES NOT HAVE ENCRYPTION FUNCTIONS | 0.02 | 41.97 | Thailand | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/11/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. | 0.03 | 22.35 | Switzerland | KOWLOON CHINA | TARGET ELECTRONICS LLC |
1/11/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. | 0.1 | 349.83 | Taiwan | KOWLOON CHINA | TARGET ELECTRONICS LLC |
1/11/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. | 1.06 | 1146.85 | Taiwan | MOSCOW CITY | URAL TELECOM SYSTEMS LLC |
1/28/2022 | 8542323100 | INTEGRATED MONOLITHIC ANALOGUE DYNAMIC MEMORY CHIP WITH RANDOM ACCESS, MEMORY VOLUME 512 MBIT, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS. GENERAL CIVIL APPLICATION. NOT FOR MILITARY PURPOSES. NOT APPLICABLE IN | 0.01 | 137.43 | Taiwan | SAR HONG KONG | MICROSAN LLC |
1/27/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF NO MORE THAN 512 MIBIT (UP TO 16 MIBIT OF FLASH-MEMORY), INTENDED FOR MOUNTING ON A PRINTED BOARD, APPLIED AS ACCESSORIES IN THE CIVIL RADIOELECTRON | 0.01 | 95.17 | China | HONG KONG | TIMOK LLC |
1/29/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUIT CONTAINING ASSEMBLED ACTIVE ELEMENTS (DIODES, TRANSISTORS), WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR SYSTEMS | 1.26 | 9170.49 | China | SHENZHEN CHINA | HARTIS DV LLC |
1/23/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS CONTAINING ASSEMBLED ACTIVE ELEMENTS (DIODES, TRANSISTORS), WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. | 0.14 | 280.12 | Philippines | MOSCOW CITY | URAL TELECOM SYSTEMS LLC |
1/12/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.98 | 5510.24 | Taiwan | PRAGUE | URAL TELECOM SYSTEMS LLC |
1/15/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS CONTAINING ASSEMBLED ACTIVE ELEMENTS (DIODES, TRANSISTORS), WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. | 0.01 | 50.36 | Unknown | SHENZHEN CHINA | TARGET ELECTRONICS LLC |