1/28/2022 | 8541290000 | MONOLITHIC INTEGRATED CIRCUITS ON SEMICONDUCTOR WATER PLATES (TRANSISTORS) NOT CUT INTO CRYSTALS: MIK8205 - ON 175 PLATES. | 28.7 | 24504 | Taiwan | TAIPEI AIRPORT TAIWAN | PJSC MICRON |
1/21/2022 | 8541290000 | TRANSISTOR MODULE. POSITION 37. INTENDED FOR SWITCHING THE POWER CIRCUITS OF THE FREQUENCY CONVERTER OF THE CONTROL STATION. MAXIMUM CONTINUOUS POWER DISPOSION WHEN WORKING AS A PART OF THE PRODUCT SU - 600 W, PN JUNCTION TEMPERATURE TJ -40...+150 | 0.34 | 114.56 | Egypt | C HURGHADA | LUKOIL EPU SERVICE LLC |
1/20/2022 | 8541210000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS WITH LESS THAN 1 W | 9.57 | 2079.94 | United States of America | MOSCOW RUSSIA | PLATAH LLC |
1/24/2022 | 8541290000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS | 1.25 | 202.63 | United States of America | MOSCOW RUSSIA | PLATAH LLC |
1/10/2022 | 8541290000 | IGBT MODULE MIAA-HB12FA-300N-150PCS TU3417-065-41687291-2016. MATERIAL-SILICON. ARE NOT DISCRETE MICROWAVE TRANSISTORS. MAXIMUM WORKING TEMPERATURE 150 DEGREES. FROM. | 45.3 | 7485.34 | Italy | ASSAGO ITALY | TD PROTON ELECTROTEX CJSC |
1/20/2022 | 8541290000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS | 3.5 | 1079.2 | United States of America | MOSCOW RUSSIA | PLATAH LLC |
1/26/2022 | 8541290000 | TRANSISTORS WITH 390W DISPOSIVE POWER /NON-SCRAP/ | 0.2 | 642.1 | Canada | MOSCOW RUSSIA | REGIONAL SYSTEM PROJECTS LLC |
1/11/2022 | 8541210000 | TRANSISTORS WITH A DISPERSION POWER OF 0.3 W ARE INTENDED TO BE USED AS ACCESSORIES FOR ASSEMBLY OF CONTROL AND MEASURING EQUIPMENT USED IN OIL AND GAS, PETROLEUM REFINING, CHEMICAL, ENERGY, PULP AND PAPER, MET | 0.01 | 4.3 | United States of America | SHAKOPEE | PG METRAN JSC |
1/27/2022 | 8541210000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS WITH LESS THAN 1 W | 0.03 | 201.94 | United States of America | MOSCOW RUSSIA | PLATAH LLC |
1/11/2022 | 8541290000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS | 1.2 | 484.3 | United States of America | MOSCOW RUSSIA | PLATAH LLC |