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Get Latest Russia Export Data of Semiconductor under HS Code 8541100009

Discover latest Russia import data of Semiconductor under HS code 8541100009. Find Russia Shipments by Country, HS Code, Product, Price, buyer, supplier name, Port & shipping information. Use these valuable insights for extensive market research. Scale your Business with our authentic Russia Export Data.

DateHS CodeProduct DetailsNet WeightTotal Value (USD)CountryDischarge PlaceSupplier
1/19/20228541100009BRIDGE DIODE RECTIFIER (SINGLE-PHASE DIODE BRIDGE), IS AN EMBEDDED ELECTRONIC COMPONENT, SEMICONDUCTOR MATERIAL - SILICON, MAXIMUM VOLTAGE 100 V, CURRENT 800 MA, DESIGNED TO CONVERT AC IN0.49149.23UkraineG TAGANROGPRIMA YUG SERVICE LLC
1/30/20228541100009DIODES, SEMICONDUCTOR, NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT ELECTRONIC LAMPS, NOT LOW VOLTAGE (VOLTAGE LESS THAN 50V), FOR SAMSUNG APPLIANCES0.6222.81UzbekistanTASHKENTSAMSUNG ELECTRONICS RUS COMPANY LLC
1/14/20228541100009SEMICONDUCTOR DIODES,NOT PHOTODIODES,NON-LIGHT EMITTING DIODES (LED),NOT SCRAP OF ELECTRICAL EQUIPMENT,NOT FOR RAILWAY TRANSPORT, NON MEDICAL PURPOSE,CIVIL USE,WITHOUT POWER SUPPLIES,FOR SAMSUNG HOUSEHOLD APPLIANCES0.3610.55UzbekistanTASHKENTSAMSUNG ELECTRONICS RUS COMPANY LLC
1/28/20228541100009DIODES, SEMICONDUCTOR, NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT ELECTRONIC LAMPS, NOT LOW VOLTAGE (VOLTAGE LESS THAN 50V), FOR SAMSUNG APPLIANCES0.211.42UzbekistanTASHKENTSAMSUNG ELECTRONICS RUS COMPANY LLC
1/17/20228541100009CRYSTALS OF SCHOTTKY DIODES. PLATES CUT INTO CRYSTALS. SILICON SEMICONDUCTOR DEVICE. ARE INTENDED FOR USE IN ELECTRICAL AND ELECTRONIC HOUSEHOLD EQUIPMENT: SCHOTTKY DIODES UNCOVERED ShPAK.757644.012 TU: KD289G6 (AG) -5.438693.1GermanySTUTTGART AIRPORTVZPP MICRON CJSC
1/26/20228541100009CRYSTALS OF SCHOTTKY DIODES. PLATES CUT INTO CRYSTALS. SILICON SEMICONDUCTOR DEVICE. ARE INTENDED FOR USE IN ELECTRICAL AND ELECTRONIC HOUSEHOLD EQUIPMENT: SCHOTTKY DIODES UNCOVERED ShPAK.757644.012 TU: KD2909G6 (AG) -3.1723060.2GermanySTUTTGART AIRPORTVZPP MICRON CJSC
1/11/20228541100009DIODES DESIGNED TO PROVIDE THE SET ELECTRICAL PARAMETERS DUE TO THE PROPERTIES OF SEMICONDUCTOR ELEMENTS, TO BE USED AS ACCESSORIES FOR ASSEMBLING CONTROL AND MEASURING EQUIPMENT USED IN OIL AND GAS0.024.3United States of AmericaSHAKOPEEPG METRAN JSC
1/11/20228541100009DIODES DESIGNED TO PROVIDE THE SET ELECTRICAL PARAMETERS DUE TO THE PROPERTIES OF SEMICONDUCTOR ELEMENTS, TO BE USED AS ACCESSORIES FOR ASSEMBLING CONTROL AND MEASURING EQUIPMENT USED IN OIL AND GAS0.013.3United States of AmericaSHAKOPEEPG METRAN JSC
1/11/20228541100009DIODES DESIGNED TO PROVIDE THE SET ELECTRICAL PARAMETERS DUE TO THE PROPERTIES OF SEMICONDUCTOR ELEMENTS, TO BE USED AS ACCESSORIES FOR ASSEMBLING CONTROL AND MEASURING EQUIPMENT USED IN OIL AND GAS0.014.3United States of AmericaSHAKOPEEPG METRAN JSC
1/31/20228541100009DIODE MODULE MDD1080-28N2-9 pcs., MUISH.435762.008TU. MATERIAL-SILICON. OPERATING TEMPERATURE <125 DEG. C., APPLIED IN SEMICONDUCTOR ELECTRICITY CONVERTERS, AS WELL AS IN POWER CIRCUITS OF ELECTRICAL DEVICES35.553083.43United KingdomCHIPPENCHEMTD PROTON ELECTROTEX CJSC

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