1/19/2022 | 8541300009 | THYRISTOR-DIODE MODULE MT/D3-740-24-DN-52PCS, MUISH.435760.001TU. MATERIAL-SILICON. OPERATING TEMPERATURE <125 DEG. C., MAXIMUM RELEASE CURRENT RATE <2000A/MKS., APPLIED IN ENERGY CONVERTERS AND OTHER | 213.2 | 15592.2 | India | MUMBAI AIRPORT INDIA | TD PROTON ELECTROTEX CJSC |
1/24/2022 | 8541100001 | SEMICONDUCTOR PLATES, NOT CUT INTO CRYSTALS. SILICON SEMICONDUCTOR DEVICE. DESIGNED FOR USE IN ELECTRICAL AND ELECTRONIC HOUSEHOLD EQUIPMENT: ULTRA-FAST DIODES UNCOVERED ShPAK.757644.030 TU: KD0860UFB (AL) - | 2.35 | 20412.6 | China | VORONEZH ADYGEYA | VZPP MICRON CJSC |
1/20/2022 | 8541100009 | SILICON DIODES IN ASSORTMENT. INTENDED FOR USE AS A CIRCUIT ELEMENT IN THE CIRCUITS OF STATISTICAL ELECTRICITY CONVERTERS OF DC AND AC | 526.9 | 445.9 | Vietnam | HAIPHONG HСMC | BALTMARKET LLC |
1/21/2022 | 8541100009 | SILICON DIODES (STABILITRONS), FOR VOLTAGE STABILIZATION AND CONVERSION, OPERATING TEMPERATURE INTERVAL FROM -60 TO +125?, FOR APPLICATION IN INDUSTRY: | 0.57 | 238.3 | India | MOSCOW CITY | GLOBEX LLC |
1/24/2022 | 8541100001 | SEMICONDUCTOR PLATES, NOT CUT INTO CRYSTALS. SILICON SEMICONDUCTOR DEVICE. ARE INTENDED FOR USE IN ELECTRICAL AND ELECTRONIC HOUSEHOLD EQUIPMENT: SCHOTTKY DIODES UNCOVERED ShPAK.757644.023 TU: KD-03150F (AG) - 54706 | 0.26 | 3700.73 | United States of America | VORONEZH ADYGEYA | VZPP MICRON CJSC |
1/31/2022 | 8541100009 | DIODE D056-9500-4-N-50PCS. TU3417-052-41687291-2011, DIODE MODULE MD3-320-65-A2-N-12PCS, MD4-660-18-A2-N-108PCS. MUISH.435760.001TU. MATERIAL-SILICON. OPERATING TEMPERATURE <125 DEGREES. FROM. | 185.17 | 11691 | Japan | EAGLE | TD PROTON ELECTROTEX CJSC |
1/17/2022 | 8541100009 | CRYSTALS OF SCHOTTKY DIODES. PLATES CUT INTO CRYSTALS. SILICON SEMICONDUCTOR DEVICE. ARE INTENDED FOR USE IN ELECTRICAL AND ELECTRONIC HOUSEHOLD EQUIPMENT: SCHOTTKY DIODES UNCOVERED ShPAK.757644.012 TU: KD289G6 (AG) - | 5.4 | 38693.1 | Germany | STUTTGART AIRPORT | VZPP MICRON CJSC |
1/26/2022 | 8541100009 | CRYSTALS OF SCHOTTKY DIODES. PLATES CUT INTO CRYSTALS. SILICON SEMICONDUCTOR DEVICE. ARE INTENDED FOR USE IN ELECTRICAL AND ELECTRONIC HOUSEHOLD EQUIPMENT: SCHOTTKY DIODES UNCOVERED ShPAK.757644.012 TU: KD2909G6 (AG) - | 3.17 | 23060.2 | Germany | STUTTGART AIRPORT | VZPP MICRON CJSC |
1/31/2022 | 8541100009 | DIODE MODULE MDD1080-28N2-9 pcs., MUISH.435762.008TU. MATERIAL-SILICON. OPERATING TEMPERATURE <125 DEG. C., APPLIED IN SEMICONDUCTOR ELECTRICITY CONVERTERS, AS WELL AS IN POWER CIRCUITS OF ELECTRICAL DEVICES | 35.55 | 3083.43 | United Kingdom | CHIPPENCHEM | TD PROTON ELECTROTEX CJSC |
1/31/2022 | 8541100001 | SEMICONDUCTOR PLATES, NOT CUT INTO CRYSTALS. SILICON SEMICONDUCTOR DEVICE. INTENDED FOR USE IN ELECTRICAL AND ELECTRONIC HOUSEHOLD EQUIPMENT: SCHOTTKY DIODES UNCOVERED ShPAK.757644.021 TU: | 9.42 | 72748.2 | Germany | FRANKFURT AIRPORT IN MAIN | VZPP MICRON CJSC |