1/10/2022 | 8541290000 | IGBT MODULE MIAA-HB12FA-300N-150PCS TU3417-065-41687291-2016. MATERIAL-SILICON. ARE NOT DISCRETE MICROWAVE TRANSISTORS. MAXIMUM WORKING TEMPERATURE 150 DEGREES. FROM. | 45.3 | 7485.34 | Italy | ASSAGO ITALY | TD PROTON ELECTROTEX CJSC |
1/31/2022 | 8541100009 | DIODE D056-9500-4-N-50PCS. TU3417-052-41687291-2011, DIODE MODULE MD3-320-65-A2-N-12PCS, MD4-660-18-A2-N-108PCS. MUISH.435760.001TU. MATERIAL-SILICON. OPERATING TEMPERATURE <125 DEGREES. FROM. | 185.17 | 11691 | Japan | EAGLE | TD PROTON ELECTROTEX CJSC |
1/27/2022 | 8541300009 | THYRISTOR TFI143-630-14-A2T3-N-51 pcs., MUISH.432533.015TU, MATERIAL - SILICON. OPERATING TEMPERATURE < 125 DEGREES C., MAXIMUM RELEASE CURRENT RATE <2000A/MKS, | 14.28 | 4008.46 | India | NEW DELHI INT AIRPORT INDIA | TD PROTON ELECTROTEX CJSC |
1/27/2022 | 8541300009 | THYRISTOR TFI393-2500-28-A2E3-N-50PCS . MUISH.432633.015TU, MATERIAL-SILICON. OPERATING TEMPERATURE < 125 DEGREES C. MAXIMUM RELEASE CURRENT RATE <2000A/╡s, APPLICABLE IN SEMICONDUCTOR CONVERTERS | 137.5 | 25501.9 | India | MOSCOW RUSSIA | TD PROTON ELECTROTEX CJSC |
1/27/2022 | 8541300009 | THYRISTOR TFI773-2000-25-A2E3-N-57PCS, TFI373-2000-25-A2E3-N-100PCS MUISH.432533.015TU, MATERIAL-SILICON. OPERATING TEMPERATURE < 125 DEGREES C. MAXIMUM RELEASE CURRENT RATE<2000A/╡s, APPLICABLE IN SOLID-STATE | 225.4 | 37411.3 | India | MOSCOW RUSSIA | TD PROTON ELECTROTEX CJSC |
1/27/2022 | 8541300009 | THYRISTOR TFI253-1000-20-A2K3H4-N-190PCS, TFI773-2000-25-A2E3-N-50PCS MUISH.432533.015TU, MATERIAL-SILICON. OPERATING TEMPERATURE < 125 DEGREES C. MAXIMUM RELEASE CURRENT RATE<2000A/╡s, APPLICABLE IN SOLID-STATE | 155.2 | 31748.4 | India | MOSCOW RUSSIA | TD PROTON ELECTROTEX CJSC |