| 1/6/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - CONFIGURATION MEMORY (MEMORY FLASH-EEPROM) WITH A MEMORY CAPACITY OF 1.6 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.04 | 78.79 | Philippines | SINGAPORE AIRPORT | SVARNOY LLC |
| 1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - CONFIGURATION MEMORY (MEMORY FLASH-EEPROM) WITH A MEMORY CAPACITY OF 1.6 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.07 | 84.48 | Philippines | SINGAPORE AIRPORT | SVARNOY LLC |
| 1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - CONFIGURATION MEMORY (MEMORY FLASH-EEPROM) WITH A MEMORY CAPACITY OF 1.6 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.04 | 53.79 | Philippines | SINGAPORE AIRPORT | SVARNOY LLC |
| 1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - CONFIGURATION MEMORY (MEMORY FLASH-EEPROM) WITH A MEMORY CAPACITY OF 1.6 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.02 | 48.51 | Philippines | SINGAPORE AIRPORT | SVARNOY LLC |
| 1/6/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE - FLASH EEPROM (PPVM - CONFIGURATION MEMORY) WITH A MEMORY CAPACITY OF 64 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.32 | 1350.74 | Taiwan | SINGAPORE AIRPORT | SVARNOY LLC |
| 1/26/2022 | 8542326100 | ELECTRONIC INTEGRATED MONOLITHIC SINGLE-CRYSTAL ASSEMBLED, ELECTRICALLY ERASE REPROGRAMMABLE PERMANENT MEMORY DEVICES, FLASH-ES PROM WITH MEMORY MAXIMUM 512 MBIT, NOT WASTE, NOT SCRAP, MEMORY CAPACITY2 | 0.5 | 1203.7 | Taiwan | VANTAA AIRPORT | GAMMA LIMITED LLC |
| 1/6/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM STORAGE DEVICE WITH A MEMORY CAPACITY OF 128 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.11 | 272.01 | China | SINGAPORE AIRPORT | SVARNOY LLC |
| 1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM (NOR) MEMORY DEVICE WITH A MEMORY CAPACITY OF 256 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C)(NOT HAZARDOUS WASTE) | 0.07 | 365.37 | China | SINGAPORE AIRPORT | SVARNOY LLC |
| 1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM TYPE STORAGE DEVICE WITH A MEMORY CAPACITY OF 512 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.08 | 969.76 | China | SINGAPORE AIRPORT | SVARNOY LLC |
| 1/19/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM (NOR) MEMORY DEVICE WITH A MEMORY CAPACITY OF 256 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.08 | 92.8 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |