1/27/2022 | 8541100009 | ELECTRONIC COMPONENTS: DIODES FOR POWER SOURCES OF ELECTRICAL EQUIPMENT, IN A PLASTIC CASE WITH 2 ELECTRIC CONTACTS ON THE EDGES, COMMON NAME: RESISTIVE DIODE, SEMICONDUCTOR TYPE: SILICON, NOMINAL VOLTAGE P 1000V | 1.56 | 20073.5 | United States of America | PSKOV | VMK LLC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL TRANSISTOR. MAXIMUM POWER DISPOSION 110W. VOLTAGE DRAIN-SOURCE 60 V. CURRENT 20A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.09 | 221.46 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/30/2022 | 8541290000 | MOSFET TRANSISTORS, NOT SCRAP EQUIPMENT, FIELD OF APPLICATION: TELECOM. EQUIPMENT; POWER DISSIPATION: 1.6 W, BREAKDOWN VOLTAGE DRAIN-SOURCE: 20 V; | 0.2 | 408.88 | United States of America | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/27/2022 | 8541100009 | ELECTRONIC COMPONENTS: DIODES FOR POWER SOURCES OF ELECTRICAL EQUIPMENT, IN A PLASTIC CASE WITH 2 ELECTRIC CONTACTS ON THE EDGES, COMMON NAME: RESISTIVE DIODE, SEMICONDUCTOR TYPE: SILICON, RATED VOLTAGE 35V POS | 0.11 | 6004.82 | United States of America | PSKOV | VMK LLC |
1/27/2022 | 8541100009 | ELECTRONIC COMPONENTS: DIODES FOR POWER SOURCES OF ELECTRICAL EQUIPMENT, IN A PLASTIC CASE WITH 2 ELECTRIC CONTACTS ON THE EDGES, COMMON NAME: RESISTIVE DIODE, SEMICONDUCTOR TYPE: SILICON, NOMINAL VOLTAGE P 1000V | 0.1 | 3536.78 | United States of America | PSKOV | PROMELECTROD LLC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. VOLTAGE DRAIN-SOURCE 1000V. SCATTERING POWER 100W. CURRENT 24A. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 16.67 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |