1/27/2022 | 8541290000 | FIELD TRANSISTOR DOES NOT CONTAIN ENCRYPTION AND CRYPTOGRAPHY FUNCTIONS, NOT USED FOR MILITARY PURPOSES, REP. PARTS FOR SERVICE AND REPAIR OF COMPUTER EQUIPMENT, COMMUNICATIONS, HOUSEHOLD APPLIANCES, VEHICLE AND CONTROL EQUIPMENT | 1.11 | 301.9 | China | MOSCOW RUSSIA | DDD2 LLC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 75 W. DRAIN-SOURCE VOLTAGE 100 V. DIMENSIONS 6.35 X 5.4 X 0.95MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.04 | 25.42 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/20/2022 | 8541290000 | THE TRANSISTOR, A COMPONENT USED IN THE EARTH EXPLORATION SATELLITE ELECTRONIC DEVICES, DOES NOT HAVE THE FUNCTION OF ENCRYPTION AND CRYPTOGRAPHY, NON-MILITARY PURPOSE, IS NOT A SCRAP OF ELECTRICAL EQUIPMENT | 0.05 | 4643.84 | China | NANJING AIRPORT | EPSILON LLC |
1/22/2022 | 8541290000 | TRANSISTOR, POWER DISSIPATION 46 WATT, ARE USED IN THE PRE-OUTPUT STAGES OF DEVICES FOR POWER AMPLIFICATION IN EQUIPMENT OF CIVIL APPLICATION. NOT FOR MILITARY PURPOSES. DO NOT APPLY IN FIRE AUTOMATIC EQUIPMENT. HAVE NO FUNCTION | 0.12 | 186.01 | China | NOVOSIBIRSK AIRPORT TOLMACHEVO | MICROSAN LLC |
1/22/2022 | 8541290000 | TRANSISTOR, POWER DISSIPATION 92 WATT, ARE USED IN THE PRE-OUTPUT STAGES OF DEVICES FOR POWER AMPLIFICATION IN EQUIPMENT OF CIVIL APPLICATION. NOT FOR MILITARY PURPOSES. DO NOT APPLY IN FIRE AUTOMATIC EQUIPMENT. HAVE NO FUNCTION | 0.73 | 192.05 | China | NOVOSIBIRSK AIRPORT TOLMACHEVO | MICROSAN LLC |
1/11/2022 | 8541290000 | TRANSISTORS FOR THE MANUFACTURE OF ELECTRICAL DEVICES, WITH A DISPOSIVE POWER FROM 20 TO 120 W, ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT, ARE NOT USED ON RAILWAY TRANSPORT | 0.28 | 190.9 | China | HELSINKI AIRPORT | PTK ARGOS ELECTRON LLC |
1/11/2022 | 8541290000 | BIPOLAR TRANSISTORS WITH A DISPOSIVE POWER OF MORE THAN 1 W, NOT OPTOELECTRONIC PHOTOTRANSISTORS, ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT, DO NOT CONTAIN DRAG. METALS ARE USED AS SPARE PARTS FOR CONTROL UNIT REPAIR | 2.94 | 5062.07 | China | VILNIUS AIRPORT LITHUANIA | ATOL LLC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL TRANSISTOR. VOLTAGE DRAIN-SOURCE 20V. SCATTERING POWER 1.6W. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 4.53 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: P-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 4.24 W. DRAIN-SOURCE VOLTAGE -100 V. CONTINUOUS DRAIN CURRENT 4.6A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 7.62 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES N-CHANNEL TRANSISTOR. POWER DISPOSION 190W. VOLTAGE COLLECTOR-EMTTER 600V. CURRENT 33A. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING. | 1.15 | 1703.78 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |