1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. VOLTAGE DRAIN-SOURCE 1000V. SCATTERING POWER 100W. CURRENT 24A. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 16.67 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/13/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 0.54 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE: SI - SILICON | 7.4 | 12240.2 | United States of America | SHENZHEN CHINA | LENINGRAD MICROWAVES LLC |
1/17/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER NOT MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES, NON-MILITARY PURPOSE: | 0.01 | 139.99 | United States of America | SHENZHEN CHINA | ICE COMPONENTS LLC |
1/19/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 3 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET TRANSISTORS, SEMICONDUCTOR TYPE: SI - SILICON | 0.02 | 125.02 | United States of America | MANSFIELD CENTER | STOUT LLC |
1/12/2022 | 8541600000 | QUARTZ MICROCIRCUITS (ASSEMBLED PIEZOELECTRIC CRYSTAL), WHICH INCLUDES A GENERATOR. IS A FREQUENCY SYNTHESIZER WITH QUARTZ STABILIZATION. USED IN THE MANUFACTURE OF RADIO-ELECTRONIC EQUIPMENT. TYPE OF SEMICONDUCTOR SILICON. | 1.05 | 4738.11 | United States of America | ST PETERSBURG RUSSIA | TA TRANS LLC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 216 W. VOLTAGE COLLECTOR-EMMITTER 600 V. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.05 | 44.23 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/21/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: | 2.6 | 167203.3 | United States of America | SAINT PETERSBURG RUSSIAN FEDERATION | AVTEK GROUP LLC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL TRANSISTOR. MAXIMUM POWER DISPOSION 110W. VOLTAGE DRAIN-SOURCE 60 V. CURRENT 20A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.09 | 221.46 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/26/2022 | 8541100009 | A DIODE (ELECTRONIC COMPONENT) IS NOT A PHOTODIIDE OR LIGHT EMITTING DIODE, IS NOT A SCRAP OF ELECTRICAL EQUIPMENT, IS NOT A HAZARDOUS WASTE, DOES NOT CONTAIN PRECIOUS METALS. USED IN THE PETROLEUM INDUSTRY. | 0.43 | 64.69 | United States of America | MOSCOW RUSSIA | REPRESENTATIVE OFFICE OF THE COMPANY SCHLUMBERGER LOGELCO INC |
1/22/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 1.25 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE: SI - SILICON | 0.29 | 355.39 | United States of America | SHENZHEN CHINA | STOUT LLC |