1/23/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS CONTAINING ASSEMBLED ACTIVE ELEMENTS (DIODES, TRANSISTORS), WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. DOES NOT HAVE ENCRYPTION FUNCTIONS | 0 | 21.74 | China | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/25/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.23 | 376.42 | China | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/31/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 128 Mbps AND A FREQUENCY OF UP TO 532 MHz WITH SUPPORT FOR DATA TRANSFER VIA SPI INTERFACE. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN THE CASE | 0.09 | 240.87 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/31/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUIT. THE PRODUCT IS A 256 Mbit FLASH MEMORY WITH AN OPERATING FREQUENCY OF UP TO 532 MHz AND A DATA TRANSFER RATE OF UP TO 66 MB/S VIA SPI INTERFACE. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 | 0.01 | 9.6 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/26/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. DOES NOT HAVE ENCRYPTION FUNCTIONS | 0.01 | 5.34 | Taiwan | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/5/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. DOES NOT HAVE ENCRYPTION FUNCTIONS | 0.01 | 81.74 | Taiwan | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/8/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. DOES NOT HAVE ENCRYPTION FUNCTIONS | 0.01 | 11.21 | Taiwan | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/8/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. DOES NOT HAVE ENCRYPTION FUNCTIONS | 0.02 | 16.04 | Taiwan | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/11/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.03 | 24.88 | Thailand | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/26/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.14 | 2635.81 | Malaysia | KOWLOON CHINA | TARGET ELECTRONICS LLC |