| 1/31/2022 | 8541290000 | MOSFET TRANSISTORS: N-CHANNEL - IPN70R600P7SATMA1 SERIES COOLMOS P7 WITH A TOTAL DISPOSION POWER 6.9 W AND DRAIN-SOURCE BREAKDOWN VOLTAGE 700V. TYPE OF SEMICONDUCTOR - SILICON. | 5.78 | 4304.48 | China | ST PETERSBURG RUSSIA | ALR LLC |
| 1/30/2022 | 8541290000 | MOSFET TRANSISTORS, NOT SCRAP EQUIPMENT, FOR MOUNTING IN BOARDS, APPLICATIONS: TELECOM. EQUIPMENT; POWER DISPOSION:19W, VDS - DRAIN-SOURCE BREAKDOWN VOLTAGE:8V, TOTAL-144 PCS; | 0.03 | 69.29 | China | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
| 1/21/2022 | 8541290000 | N-CHANNEL MOSFET TRANSISTORS: SUPER MESH STN1HNK60 SERIES WITH DISPOSION POWER 3.3 W, DRAIN-SOURCE VOLTAGE 600V; IPD50R3K0CEAUMA1 COOLMOS CE SERIES WITH A TOTAL DISPOSION POWER OF 26 W AND DRAIN-SOURCE BREAKDOWN VOLTAGE OF 550V; TK15A20D,S4X(S MO | 202.21 | 27842.7 | China | ST PETERSBURG RUSSIA | ALR LLC |
| 1/23/2022 | 8541290000 | MOSFET TRANSISTORS, NOT SCRAP EQUIPMENT, FIELD OF APPLICATION: TELECOM. EQUIPMENT; POWER DISSIPATION: 139 W, VGS TH - GATE-SOURCE THRESHOLD VOLTAGE: 3.8 V, TOTAL-6 pcs.; | 0.01 | 29.09 | Malaysia | SAINT PETERBURG RUSSIA | SPHERE OF ELECTRONICS LLC |
| 1/13/2022 | 8541290000 | POWERFUL MOSFET TRANSISTORS: WITH NPN JUNCTION ??56-16,115 WITH A TOTAL DISPOSION POWER 1.3W AND COLLECTOR-EMMITTER VOLTAGE 80V; N-CHANNEL TK10A80W,S4X(S WITH TOTAL DISPOSION POWER 40W AND DRAIN-SOURCE BREAKDOWN VOLTAGE 800V; N-CHANNEL SU SERIES | 355.81 | 64777.7 | China | ST PETERSBURG RUSSIA | ALR LLC |