1/13/2022 | 8541290000 | POWERFUL MOSFET TRANSISTORS: WITH NPN JUNCTION ??56-16,115 WITH A TOTAL DISPOSION POWER 1.3W AND COLLECTOR-EMMITTER VOLTAGE 80V; N-CHANNEL TK10A80W,S4X(S WITH TOTAL DISPOSION POWER 40W AND DRAIN-SOURCE BREAKDOWN VOLTAGE 800V; N-CHANNEL SU SERIES | 355.81 | 64777.7 | China | ST PETERSBURG RUSSIA | ALR LLC |
1/13/2022 | 8541290000 | MOSFET TRANSISTORS, NOT SCRAP EQUIPMENT, FIELD OF APPLICATION: TELECOM. EQUIPMENT; DISSIPATION POWER:1.3W, VOLTAGE:20V, TOTAL-1 PCS; | 0 | 3.65 | South Korea | SHENZHEN CHINA | SPHERE OF ELECTRONICS LLC |
1/23/2022 | 8541100009 | DIODE STABILITRON, NOT SCRAP ELECTRICAL EQUIPMENT, FIELD OF APPLICATION: TELECOMMUNICATION EQUIPMENT, VOLTAGE: 1.8 V, POWER DISSIPATION: 500 MW, TOTAL - 1440 PCS.; | 0.04 | 68.57 | China | SAINT PETERBURG RUSSIA | SPHERE OF ELECTRONICS LLC |
1/23/2022 | 8541290000 | MOSFET TRANSISTORS, NOT SCRAP EQUIPMENT, FIELD OF APPLICATION: TELECOM. EQUIPMENT; DISPOSION POWER: 405 W, VOLTAGE: 100 V, TOTAL - 50 PCS; | 0.08 | 122.88 | United States of America | SAINT PETERBURG RUSSIA | SPHERE OF ELECTRONICS LLC |
1/23/2022 | 8541290000 | MOSFET TRANSISTORS, NOT SCRAP EQUIPMENT, FIELD OF APPLICATION: TELECOM. EQUIPMENT; POWER DISSIPATION: 139 W, VGS TH - GATE-SOURCE THRESHOLD VOLTAGE: 3.8 V, TOTAL-6 pcs.; | 0.01 | 29.09 | Malaysia | SAINT PETERBURG RUSSIA | SPHERE OF ELECTRONICS LLC |
1/19/2022 | 8541290000 | TRANSISTORS WITH A POWER DISSIPATION MORE THAN 1 W: SMD-TRANSISTOR, NOT PHOTO-TRANSISTOR; 1. TYPE OF SEMICONDUCTOR - BIPOLAR; 2. COMMON NAME - TRANSISTOR; TOTAL: 100000 PCS/2 PACKS | 49.6 | 637.98 | China | VLADIVISTOK RUSSIA | KAMELIA LLC |
1/28/2022 | 8541290000 | IGBT MODULE WITH INSULATED GATE BIPOLAR TRANSISTORS, POWER DISPOSION 1800W, ART.FF300R17KE4, CURRENT 440A, 1700V, RESISTANCE 0.75M?. APPLICATIONS: HIGH POWER CONVERTERS, MOTOR DRIVES, UPS, WIND TURBINES. TOTAL | 161 | 43217.4 | Hungary | TAIPEI AIRPORT TAIWAN | GORIZONT LLC |
1/23/2022 | 8541100009 | POWER RECTIFICATION DIODES, SILICON DIFFUSIVE, DESIGNED TO WORK IN RECTIFIER DEVICES OF EQUIPMENT, ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT AND ELECTRICAL ASSEMBLY, SEMICONDUCTOR TYPE SILICON, TOTAL - 12410 PCS | 19.12 | 29564.5 | Uzbekistan | MOSCOW RUSSIA | ANTARES JSC |
1/26/2022 | 8541290000 | TRANSISTOR, DESIGNED FOR MOUNTING ON PRINTED BOARDS (IS NOT A SCRAP OF ELECTRICAL EQUIPMENT), FIELD, P-CHANNEL, DISPOSIVE POWER 1.3W, APPLICATION: ASSEMBLY OF ELECTROMECHANICAL TOYS, TOTAL 17800 PCS | 7.7 | 58.99 | China | SUIFENHE CHINA | LYUKSTORG LLC |
1/26/2022 | 8541100009 | ELECTRONIC COMPONENTS: SEMICONDUCTOR DIODES FOR POWER SOURCES OF ELECTRICAL EQUIPMENT, IN A PLASTIC CASE WITH 2 ELECTRIC CONTACTS ON THE EDGES OF WHICH, TOTAL 5 PCS, THE PRODUCT OCCUPATIONS PART OF A CARDBOARD BOX. | 0.01 | 12.78 | China | PSKOV | VMK LLC |