1/24/2022 | 3818001000 | DOPOED SILICON, CHEMICAL COMPOUNDS: SILICON WAfer (SUBSTRATE), HAS A ROUND SHAPE, STANDARD FOR SEMICONDUCTOR WAFS, DIAMETER 150 MM, WATER THICKNESS IS FROM 300 TO 4000 MKM, SUPPLIED FOR SCIENTIFIC RESEARCH | 6 | 8003.6 | Japan | MOSCOW RUSSIA | TECHMASHIMPORT LLC |
1/18/2022 | 3810100000 | ADDITIVE FOR FLUXING BATHS, USED IN THE PROCESS OF HOT GALVANIZING TO REDUCE THE THICKNESS OF THE ZINC COATING. | 900 | 6179.05 | Italy | Maserada Sul Piave | NEO CHEMICAL LLC |
1/18/2022 | 3818009000 | SEMICONDUCTOR WATER FROM SINGLE-CRYSTAL GALLIUM ARSENIDE (GAAS) WITH SURFACE APPLIED EPITAXIAL HETEROSTRUCTURE IN THE FORM OF ULTRA-THIN LAYERS OF GALLIUM ARSENIDE AND INDIUM-GALLIUM ARSENIDE (INGAAS) WITH A TOTAL THICKNESS OF 3.6 MKM. PLATES | 0.86 | 12505.7 | China | SUZHOU | NPF MIKRAN JSC |
1/21/2022 | 3809109000 | CORN STARCH ANTI-SET-OFF POWDER FOR PRINTING POWDER (100%) IS USED ON LARGE MULTICOLOR PRINTING MACHINES, ON THE LAST PASS, WHEN PRINTING ON BOARD OF MEDIUM THICKNESS AND WITH MEDIUM FOOT HEIGHT, AND FOR FURTHER | 796.8 | 2243.48 | Netherlands | ALKMAAR | YAM INTERNATIONAL CIS LLC |
1/17/2022 | 3818009000 | GALLIUM ARSENIDE SEMICONDUCTOR WAFERS IN THE FORM OF DISC 4 INCH (100 MM) THICKNESS 0.63 MM, SINGLE-CRYSTAL GALLIUM ARSENIDE (GAAS) BASE WITH EPITAXIAL HETEROSTRUCTURE APPLIED ON THE SURFACE | 0.35 | 5981.65 | Taiwan | XINZHU CITY | NPF MIKRAN JSC |
1/11/2022 | 3801209000 | NON-STICK COATING BASED ON GLI-AN GM2 COLLOID GRAPHITE ART.KD00711 SOLID CONTENT 30%, DENSITY 1.2g/cm3, APPLICATION THICKNESS 0.1-0.5MM, MATERIAL CONSUMPTION 0.1-0.6KG/M3 -30KG. DESIGNED EXCLUSIVELY FOR METALLURGICAL | 30 | 1005.18 | Unknown | SKAVIN | PROMIMPEX LOGISTICS LLC |