1/24/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH MEMORY 128 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 18.08 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/22/2022 | 8542327500 | MONOLITHIC INTEGRATED MICROCIRCUIT, REPRESENTING A MEMORY, DESIGNED FOR USE IN TELECOMMUNICATION EQUIPMENT, OPERATING VOLTAGE 1.8V ~ 5.5V, MEMORY SIZE 8KB (1K X 8), OPERATING TEMPERATURE -40░C ~ 85░C (TA). DOES NOT HAVE FUNCTION | 0.03 | 47.43 | Philippines | TIF RIVER FOLLS | GLOBAL KEY LLC |
1/6/2022 | 8542327500 | DRK ELECTRONIC, INTEGRAL, MONOLITHIC MICROCIRCUITS -: STORAGE DEVICE: TYPE ES: PROM (EEPROM): C C, MEMORY CAPACITY: 64 KBIT (RANGE, OPERATING TEMPERATURES -40: +85 C) (NOT: HAZARDOUS WASTE) | 0.02 | 21.77 | Thailand | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542327500 | MONOLITHIC INTEGRATED MICROCIRCUIT, REpresentING RAM MEMORY, INTENDED FOR USE IN TELECOMMUNICATION EQUIPMENT. MEMORY SIZE 32M-BIT 4M X 8 , POWER SUPPLY 3-3.3V, OPERATING TEMPERATURE -40░C ~ 85░C (TC). DOES NOT HAVE F | 0.18 | 1902.11 | Taiwan | PRAGUE | GLOBAL KEY LLC |
1/24/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH A MEMORY CAPACITY OF 512 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 11.21 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/17/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FPVM CONFIGURATION MEMORY (EEPROM STORAGE DEVICE - EEPROM) WITH A MEMORY CAPACITY OF 1 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.46 | 2095.97 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/17/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH A MEMORY SIZE OF 1 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 10.17 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/17/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH MEMORY 4 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0 | 3.5 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542327500 | MONOLITHIC ELECTRONIC INTEGRATED SCHEME - ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (ES PROM) WITH A MEMORY CAPACITY OF 2 KBIT, THE FUNCTION OF ENCRYPTION, CRYPTOGRAPHY IS ABSENT. WORKING TEMPERATURE FROM - 40 TO + 85 DEGREES. FROM. | 0.03 | 63.04 | Malaysia | PEACHTHREE CITY | DEI SYSTEMS LLC |
1/18/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH MEMORY 16 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 11.22 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |