1/21/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT MEMORY IN THE FORM OF INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM - 40 TO + 85 16 MB | 0.03 | 63.94 | Malaysia | SHENZHEN CHINA | ALTRABETA LLC |
1/21/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT MEMORY IN THE FORM OF INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM - 40 TO + 85 16 MB | 0.01 | 26.1 | Malaysia | SHENZHEN CHINA | ALTRABETA LLC |
1/30/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUITS, DOES NOT CONTAIN THE FUNCTION OF CRYPTOGRAPHY (ENCRYPTION), NOT SCRAP EQUIPMENT, FOR INSTALLATION IN ELECTRONIC BOARDS, EEPROM MEMORY, MEMORY SIZE: 512 Kbps, VOLTAGE: 1.8-5.5 V, WORKING TEMPERATURE: -40-+85 ?; | 0.05 | 85.31 | Malaysia | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/30/2022 | 8542326100 | ELECTRONIC INTEGRATED CIRCUITS, NOT SCRAP EQUIPMENT, FOR INSTALLATION IN ELECTRONIC BOARDS, NOR FLASH MEMORY, MEMORY SIZE: 128 MBIT, VOLTAGE: 2.7-3.6 V, OPERATING TEMPERATURE: -40-+85 C, TOTAL - 100 PCS; | 0.02 | 1226.36 | Malaysia | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/17/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM (NOR) MEMORY DEVICE WITH A MEMORY OF 512 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 49.58 | Malaysia | MANSFIELD CENTER | PHOENIX LLC |
1/17/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 5.5 V OPERATING TEMPERATURE FROM - 40 TO + 85 256 KB | 0.01 | 18.2 | Malaysia | HONGKONG AIRPORT | ALTRABETA LLC |