1/24/2022 | 8542399010 | CHIP 74HC32D,653. IS AN ACTIVE MONOLITHIC INTEGRAL IC. CONTAINS FOUR <2OR> LOGIC ELEMENTS MADE ON CMOS TECHNOLOGY AND PACKED IN ONE CASE. THIS CHIP IS ASSEMBLED ON THE BASIS OF FIELD TRANSISTORS ( | 18.63 | 3682.76 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/10/2022 | 8542399010 | CHIP 74HC32D,653. REPRESENTS FOUR <2OR> LOGIC ELEMENTS MADE ON CMOS TECHNOLOGY AND PACKED IN ONE CASE. THIS CHIP IS ASSEMBLED ON THE BASIS OF FIELD TRANSISTORS (ACTIVE ELEMENTS) WITH INSULATED GATE | 5.67 | 836.2 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/10/2022 | 8542339000 | THE LM211DT INTEGRATED MONOLITHIC CHIP IS A DIFFERENTIAL COMPARATOR MADE IN MOS TECHNOLOGY. INTENDED FOR COMPARISON OF CONTINUOUSLY CHANGING SIGNALS. ITS COMPOSITION HAS ACTIVE ELEMENTS (OPERATIONAL AMPLIFIER) | 1.04 | 337.2 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/10/2022 | 8542399010 | ELECTRONIC MONOLITHIC INTEGRAL CIRCUIT - HALL EFFECT FOR INSTALLATION ON PRINTED BOARDS (NOT RADIO-RESISTANT, NON-CRYPTION TECHNOLOGY), NON-MILITARY PURPOSE (NOT SCRAP ELECTRICAL EQUIPMENT), SURFACE MOUNTING ON THE BOARD PRODUCTS, PACKED IN A BLISTER | 6.68 | 22541.7 | China | HONGKONG AIRPORT | VEGA ABSOLUT LLC |
1/26/2022 | 8542399010 | MONOLITHIC INTEGRAL CHIP AOZ1280CI. MADE ON MOP TECHNOLOGY. IS AN ACTIVE VOLTAGE REGULATOR FOR THE SUPPLY VOLTAGE. CONSISTS OF ACTIVE TRANSISTOR COMPONENTS, AMPLIFIER AND PASSIVE RESISTOR COMPONENTS. | 1.69 | 3383.72 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/26/2022 | 8542399010 | MONOLITHIC INTEGRATED CHIP TPS560200DBVR. MADE ON MOP TECHNOLOGY. IS AN ADJUSTABLE VOLTAGE CONVERTER. THE CHIP CONTAINS ACTIVE COMPONENTS - FIELD TRANSISTORS, PASSIVE | 1.37 | 2003 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/26/2022 | 8542399010 | CHIP SN74LVC1G14DBVR. A MONOLITHIC INTEGRATED CHIP IS A SCHMIDT TRIGGER MADE ON CMOS TECHNOLOGY AND PACKED IN A PLASTIC CASE WITH DIMENSIONS OF 3.0*3.05*1.45 MM. THIS TRIGGER IS ASSEMBLED ON THE BASIS OF FIELD TRANSISTORS WITH | 2.02 | 894.8 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/21/2022 | 8542311001 | MICROPROCESSORS MANUFACTURED BY A TECHNOLOGICAL PROCESS OF NO MORE THAN 32 NANOMETERS, MANUFACTURED USING SEMICONDUCTOR TECHNOLOGY AND PLACED ON A MULTILAYER GLASS-TEXTOLITE PCB, FOR PERSONAL COMPUTERS, DOES NOT CONTAIN THE FUNCTION | 16.8 | 10292.8 | China | KALININGRAD AIRPORT KHRABROVO | LOGISTICS M LLC |
1/21/2022 | 8542311001 | MICROPROCESSORS MANUFACTURED BY A TECHNOLOGICAL PROCESS OF NO MORE THAN 32 NANOMETERS, MANUFACTURED USING SEMICONDUCTOR TECHNOLOGY AND PLACED ON A MULTILAYER GLASS-TEXTOLITE PCB, FOR PERSONAL COMPUTERS, DOES NOT CONTAIN THE FUNCTION | 1.52 | 7505.03 | China | KALININGRAD AIRPORT KHRABROVO | LOGISTICS M LLC |
1/11/2022 | 8542323900 | ELECTRONIC INTEGRATED MONOLITHIC DIGITAL - DYNAMIC RANDOM MEMORY DEVICES (DOZE) WITH 2 GB MEMORY, FOR SUPPLY VOLTAGE 1.283 - 1.45 V, OBTAINED USING CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR) SRAN | 0.01 | 55.1 | China | HONG KONG | KOMPOTRADE LLC |