1/12/2022 | 3818001000 | SINGLE-CRYSTAL SILICON, ALLOYED IN PLATES, INTENDED FOR PRODUCTION OF SEMICONDUCTOR DEVICES, NOT WASTE: | 16 | 18486.1 | Germany | MOSCOW RUSSIA | CJSC KREMNIY MARKETING |
1/5/2022 | 3818001000 | SILICON PLATES POLISHED, ALLOYED, SINGLE-CRYSTAL, FOR ELECTRONICS; PACKED IN CASSETTES /25 PCS/, VACUUM PACKAGES, PADDED WITH CARDBOARD AND FOAM INSERTS: | 71.43 | 42617.2 | China | MOSCOW RUSSIA | EPIEL JSC |
1/31/2022 | 3818001000 | SILICON PLATES POLISHED, ALLOYED, SINGLE-CRYSTAL, FOR ELECTRONICS; PACKED IN CASSETTES /25 PCS/, VACUUM PACKAGES, PADDED WITH CARDBOARD AND FOAM INSERTS: | 49.34 | 27842.3 | China | MOSCOW RUSSIA | EPIEL JSC |
1/17/2022 | 3818001000 | SILICON PLATES POLISHED, ALLOYED, SINGLE-CRYSTAL, FOR ELECTRONICS; PACKED IN CASSETTES /25 PCS/, VACUUM PACKAGES, PADDED WITH CARDBOARD AND FOAM INSERTS: | 37.18 | 24698.9 | China | MOSCOW RUSSIA | EPIEL JSC |
1/26/2022 | 3818001000 | SILICON ALLOYED, REFINED, SINGLE-CRYSTAL, IN THE FORM OF PLATES, POLISHED: | 19.9 | 16417.2 | Taiwan | TAIPEI AIRPORT TAIWAN | PJSC MICRON |
1/4/2022 | 3818001000 | SINGLE-CRYSTAL PLATES OF PHOSPHORUS-DOped SILICON ARE SUPPLIED FOR FURTHER MULTI-STAGE PROCESSING IN PRODUCTION. | 11276.2 | 1059262.6 | China | XI AN | HEVEL THROUGH LLC SHIPKO TRANSPORT LLC |
1/31/2022 | 3818001000 | SILICON PLATES POLISHED, ALLOYED, SINGLE-CRYSTAL, FOR ELECTRONICS; PACKED IN CASSETTES /25 PCS/, VACUUM PACKAGES, PADDED WITH CARDBOARD AND FOAM INSERTS: | 109.89 | 96716.3 | China | MOSCOW RUSSIA | EPIEL JSC |
1/28/2022 | 3818001000 | SILICON ALLOYED, PURIFIED, SINGLE-CRYSTAL, IN THE FORM OF PLATES, POLISHED, INTENDED FOR USE IN MICROELECTRONICS FOR THE MANUFACTURE OF INTEGRATED MICROCIRCUITS: | 368 | 50337.1 | Japan | TOKYO | PJSC MICRON |
1/11/2022 | 3818001000 | SINGLE-CRYSTAL PLATES OF PHOSPHORUS-DOped SILICON ARE SUPPLIED FOR FURTHER MULTI-STAGE PROCESSING IN PRODUCTION. | 22552.3 | 2119982.3 | China | XI AN | OTT LLC |
1/18/2022 | 3818009000 | SEMICONDUCTOR WATER FROM SINGLE-CRYSTAL GALLIUM ARSENIDE (GAAS) WITH SURFACE APPLIED EPITAXIAL HETEROSTRUCTURE IN THE FORM OF ULTRA-THIN LAYERS OF GALLIUM ARSENIDE AND INDIUM-GALLIUM ARSENIDE (INGAAS) WITH A TOTAL THICKNESS OF 3.6 MKM. PLATES | 0.86 | 12505.7 | China | SUZHOU | NPF MIKRAN JSC |