1/25/2022 | 8541100009 | DIODE MODULE A DEVICE CONSISTING OF TWO INTERCONNECTED DIODES LOCATED IN A SINGLE PLASTIC CASE ON THE UPPER SURFACE OF THE MODULE 3 CONNECTING TERMINALS ARE LOCATED. TYPE OF SEMICONDUCTOR : SILICON, INTENDED, OPERATING PRINCIPLE: | 28.4 | 1168.7 | China | MOSCOW RUSSIA | ELLOY LLC |
1/29/2022 | 8541100009 | RECTIFYING SINGLE DIODE. FOR MANUFACTURING OF ELECTRONIC CIRCUIT BASED ON PRINTED BOARDS | 0.2 | 12.01 | China | MOSCOW RUSSIA | IP KOZODAYEVA IRINA SERGEEVNA |
1/29/2022 | 8541100009 | RECTIFYING SINGLE DIODE. FOR MANUFACTURING OF ELECTRONIC CIRCUIT BASED ON PRINTED BOARDS | 0.01 | 12.23 | China | MOSCOW RUSSIA | IP KOZODAYEVA IRINA SERGEEVNA |
1/9/2022 | 8541100009 | ABS2 IS A DIODE BRIDGE SOLID STATE SINGLE PHASE BRIDGE SURFACE MOUNTED RECTIFIER (SMD) IFAV1 = 1 A, VRRM = 200 : 1000 V, VF < 1.1 V, IFSM = 27/30 A, TJMAX = 150░C, TRR ~ 1500 Nsec!|||! AREAS OF USE: RECTIFICATION OF NETWORKS 50/60 G | 1.13 | 133.31 | China | RYAZAN OBLAST | PK SKIF LLC |
1/27/2022 | 8541100009 | SEMICONDUCTOR DIODES - DIODE SINGLE-PHASE RECTIFYING BRIDGE VOLTAGE 1000 V DOES NOT CONTAIN ENCRYPTION AND CRYPTOGRAPHY FUNCTIONS, IS NOT USED FOR MILITARY PURPOSES, HAS A GENERAL INDUSTRIAL PURPOSE. | 0.01 | 31.66 | China | ST PETERSBURG RUSSIA | ALTRABETA LLC |
1/26/2022 | 8541100009 | DIODE. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES THE CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). THIS MAIN PROPERTIES OF THE DIODE IS USED TO CONVERT AC INTO | 65 | 6577.6 | China | VUKSI | ENERGOMERA JSC |
1/18/2022 | 8541100009 | DIODE BAS16J-115. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES THE CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). A DIODE IS A P-N JUNCTION MADE ON A SILICON CRYSTAL. | 1.61 | 574.88 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8541100009 | DIODE VS-10MQ060NTRPBF. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES THE CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). IS A PN JUNCTION MADE ON A SILICON CRYSTAL. NOT | 0.78 | 348.23 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/24/2022 | 8541100009 | DIODE VS-10MQ060NTRPBF. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). IS A PN JUNCTION MADE ON A SILICON CRYSTAL. NOT | 0.78 | 345.87 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/26/2022 | 8541100009 | DIODE (EXCEPT PHOTODIODES OR LIGHT EMITTING DIODES (LED) IS SUPPLIED EXCLUSIVELY AS COMPONENT PRODUCTS FOR USE IN OWN PRODUCTION OF SINGLE-PHASE ELECTRICITY METER NARTIS-100 PRODUCED BY ZAVOD NARTIS IN PUBLICATION | 2.01 | 293.02 | China | SHENZHEN CHINA | PLANT NARTIS LLC |