1/5/2022 | 3818001000 | SILICON PLATES POLISHED, ALLOYED, SINGLE-CRYSTAL, FOR ELECTRONICS; PACKED IN CASSETTES /25 PCS/, VACUUM PACKAGES, PADDED WITH CARDBOARD AND FOAM INSERTS: | 71.43 | 42617.2 | China | MOSCOW RUSSIA | EPIEL JSC |
1/31/2022 | 3818001000 | SILICON PLATES POLISHED, ALLOYED, SINGLE-CRYSTAL, FOR ELECTRONICS; PACKED IN CASSETTES /25 PCS/, VACUUM PACKAGES, PADDED WITH CARDBOARD AND FOAM INSERTS: | 49.34 | 27842.3 | China | MOSCOW RUSSIA | EPIEL JSC |
1/17/2022 | 3818001000 | SILICON PLATES POLISHED, ALLOYED, SINGLE-CRYSTAL, FOR ELECTRONICS; PACKED IN CASSETTES /25 PCS/, VACUUM PACKAGES, PADDED WITH CARDBOARD AND FOAM INSERTS: | 37.18 | 24698.9 | China | MOSCOW RUSSIA | EPIEL JSC |
1/4/2022 | 3818001000 | SINGLE-CRYSTAL PLATES OF PHOSPHORUS-DOped SILICON ARE SUPPLIED FOR FURTHER MULTI-STAGE PROCESSING IN PRODUCTION. | 11276.2 | 1059262.6 | China | XI AN | HEVEL THROUGH LLC SHIPKO TRANSPORT LLC |
1/31/2022 | 3818001000 | SILICON PLATES POLISHED, ALLOYED, SINGLE-CRYSTAL, FOR ELECTRONICS; PACKED IN CASSETTES /25 PCS/, VACUUM PACKAGES, PADDED WITH CARDBOARD AND FOAM INSERTS: | 109.89 | 96716.3 | China | MOSCOW RUSSIA | EPIEL JSC |
1/11/2022 | 3818001000 | SINGLE-CRYSTAL PLATES OF PHOSPHORUS-DOped SILICON ARE SUPPLIED FOR FURTHER MULTI-STAGE PROCESSING IN PRODUCTION. | 22552.3 | 2119982.3 | China | XI AN | OTT LLC |
1/15/2022 | 3818001000 | SILICON PLATES POLISHED, ALLOYED, SINGLE-CRYSTAL, FOR ELECTRONICS; PACKED IN CASSETTES /25 PCS/, VACUUM PACKAGES, PADDED WITH CARDBOARD AND FOAM INSERTS: | 125.97 | 113029.7 | China | MOSCOW RUSSIA | EPIEL JSC |
1/19/2022 | 3818001000 | SILICON DOPED. 6TPP1051 TYPE 6TPP1051 SINGLE CRYSTAL SILICON WATER: BORON DOPED (P TYPE CONDUCTIVITY), 8 (200 MM) DIAMETER, 725 MM (0.725 MM) THICK. | 118.95 | 17620.1 | China | HANZHOU CHINA | FERROTEK NORD JSC |
1/6/2022 | 3818001000 | SILICON DOPED. 6TPP1051 TYPE 6TPP1051 SINGLE CRYSTAL SILICON WATER: BORON DOPED (P TYPE CONDUCTIVITY), 8 (200 MM) DIAMETER, 725 MM (0.725 MM) THICK. | 100.65 | 14572.8 | China | HANZHOU CHINA | FERROTEK NORD JSC |
1/24/2022 | 3818001000 | SINGLE-CRYSTAL WATER MATERIALS FROM DOPED SILICONE ARE SUBSTRATES FOR SUBSEQUENT SPUTTING OF DIFFERENT MATERIALS ON THEM TO PRODUCE MICROELECTRONIC DEVICES (RESISTORS, CAPACITORS, ETC.) | 0.69 | 2003.6 | China | NOVOSIBIRSK AIRPORT TOLMACHEVO | AKADEMVAK LLC |