1/20/2022 | 8543708000 | ELECTRIC DEVICE FOR APPLICATION OF COSMETIC (MOISTURIZING) MASKS, POWERED FROM A BUILT-IN BATTERY WITH A CAPACITY OF 1050 MA, COMPLETE WITH A CABLE FOR CHARGING AND INSTRUCTIONS, VARIOUS COLORS, VOLTAGE 3.7 V, MATERIAL SILICONE/PLASTIC IN, PACKED | 35.52 | 13019.3 | China | MOSCOW RUSSIA | FOREO LLC |
1/25/2022 | 8541100009 | DIODE MODULE A DEVICE CONSISTING OF TWO INTERCONNECTED DIODES LOCATED IN A SINGLE PLASTIC CASE ON THE UPPER SURFACE OF THE MODULE 3 CONNECTING TERMINALS ARE LOCATED. TYPE OF SEMICONDUCTOR : SILICON, INTENDED, OPERATING PRINCIPLE: | 28.4 | 1168.7 | China | MOSCOW RUSSIA | ELLOY LLC |
1/28/2022 | 8547200009 | INSULATING FITTINGS FROM PLASTIC (NOT ELECTRICAL SCRAP, NOT ELECTRICAL ASSEMBLY, DOES NOT CONTAIN SILICONE AND HALOGENS), USED IN THE FIELD OF INDUSTRIAL ELECTRONICS AND AUTOMATION: | 2.73 | 2185.46 | Germany | MOSCOW RUSSIA | PHOENIX CONTACT RUS LLC |
1/28/2022 | 8547200009 | INSULATING FITTINGS FROM PLASTIC (NOT ELECTRICAL SCRAP, NOT ELECTRICAL ASSEMBLY, DOES NOT CONTAIN SILICONE AND HALOGENS), USED IN THE FIELD OF INDUSTRIAL ELECTRONICS AND AUTOMATION: | 1 | 85.81 | Poland | MOSCOW RUSSIA | PHOENIX CONTACT RUS LLC |
1/24/2022 | 8541490000 | PHOTOTRANSISTOR VEMT3700F-GS08. IS A NPN SILICON PHOTOTRANSISTOR IN A PLASTIC BODY. PHOTO-SENSITIVE. PHOTOTRANSISTOR - OPTOELECTRONIC SEMICONDUCTOR DEVICE, OPTION OF BIPOLAR TRANSISTOR. DIFFERS FROM | 1.41 | 1887.6 | Philippines | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/27/2022 | 8541100009 | ELECTRONIC COMPONENTS: DIODES FOR POWER SOURCES OF ELECTRICAL EQUIPMENT, IN A PLASTIC CASE WITH 2 ELECTRIC CONTACTS ON THE EDGES, COMMON NAME: RESISTIVE DIODE, SEMICONDUCTOR TYPE: SILICON, NOMINAL VOLTAGE P 1000V | 1.56 | 20073.5 | United States of America | PSKOV | VMK LLC |
1/24/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 5.42 | 1285.71 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/25/2022 | 8541100009 | HIGH-VOLTAGE PULSE DIODES, TYPE - SILICON, FOR CONVERSION OF AC PULSE VOLTAGE INTO DC, IN A PLASTIC CASE WITH FLEXIBLE OUTPUTS, APPLIED IN POWER SOURCES OF MEDICAL X-RAY EQUIPMENT | 10 | 2522.25 | China | YIXING JIANGSU CHINA | BITRONIK LLC |
1/10/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 1.35 | 322.23 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/20/2022 | 8509800000 | ELECTROMECHANICAL LOV'FINGER DEVICE, MADE OF SILICONE AND PLASTIC, IN A CARDBOARD BOX, WHITE, DESIGNED TO OPERATE ON BATTERIES | 2.5 | 455.56 | China | HANNOVER STOLBERG | IP BARKOVA MARIA ALEKSANDROVNA |