1/25/2022 | 8541100009 | DIODE MODULE A DEVICE CONSISTING OF TWO INTERCONNECTED DIODES LOCATED IN A SINGLE PLASTIC CASE ON THE UPPER SURFACE OF THE MODULE 3 CONNECTING TERMINALS ARE LOCATED. TYPE OF SEMICONDUCTOR : SILICON, INTENDED, OPERATING PRINCIPLE: | 28.4 | 1168.7 | China | MOSCOW RUSSIA | ELLOY LLC |
1/24/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 5.42 | 1285.71 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/25/2022 | 8541100009 | HIGH-VOLTAGE PULSE DIODES, TYPE - SILICON, FOR CONVERSION OF AC PULSE VOLTAGE INTO DC, IN A PLASTIC CASE WITH FLEXIBLE OUTPUTS, APPLIED IN POWER SOURCES OF MEDICAL X-RAY EQUIPMENT | 10 | 2522.25 | China | YIXING JIANGSU CHINA | BITRONIK LLC |
1/10/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 1.35 | 322.23 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/26/2022 | 8541100009 | DIODE MBR0540-TP. THEY ARE PN JUNCTIONS MADE ON A SILICON CRYSTAL. ENCLOSED IN A RECTANGULAR PLASTIC CASE WITH TWO NICKEL TERMINALS. | 2.73 | 831.8 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/27/2022 | 8541100009 | ELECTRONIC COMPONENTS: SEMICONDUCTOR DIODES FOR ELECTRICAL EQUIPMENT POWER SOURCES, IN A PLASTIC CASE WITH 2 ELECTRIC CONTACTS ON THE EDGES, COMMON NAME: SCHOTTKY DIODE, SEMICONDUCTOR TYPE: SILICON, RATED VOLTAGE | 0.07 | 239.37 | China | PSKOV | PROMELECTROD LLC |
1/18/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 10.15 | 2523 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8541100009 | LIMITING DIODE SMBJ150A-E3/52. A DIODE FOR SUPPRESSING TRANSIENT VOLTAGE SURGE IS A PN JUNCTION MADE ON A SILICON PLATE. THE DIODE IS PACKED IN A PLASTIC CASE, FROM THE ENDS OF WHICH THERE ARE TERMINALS FOR INSTALLATION ON THE BOARD | 0.82 | 187.5 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/17/2022 | 8541100009 | DIODE ASSEMBLY BAV99-TP. IT IS TWO SILICON DIODES WITH A CATHODE AND ANODE CONNECTED IN SERIES BETWEEN THEM AND IS USED FOR TWO-PERIOD RECTIFICATION OF AC TO DC. ON THE CASE THERE ARE 3 EXTERNAL OHMIC | 3.4 | 468.8 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/17/2022 | 8541100009 | DIODE BRIDGE SDB107-TP. IS 4 SILICON DIODES IN A PLASTIC CASE WITH RIGID TERMINALS FOR MOUNTING ON A PRINTED BOARD. OPERATING PRINCIPLE OF A DIODE BRIDGE: AC CURRENT HAS TWO HALF-WAVE: POSITIVE AND NEGATIVE. EACH SHOULDER | 58.61 | 4101.5 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |