1/25/2022 | 8541100009 | DIODE MODULE A DEVICE CONSISTING OF TWO INTERCONNECTED DIODES LOCATED IN A SINGLE PLASTIC CASE ON THE UPPER SURFACE OF THE MODULE 3 CONNECTING TERMINALS ARE LOCATED. TYPE OF SEMICONDUCTOR : SILICON, INTENDED, OPERATING PRINCIPLE: | 28.4 | 1168.7 | China | MOSCOW RUSSIA | ELLOY LLC |
1/27/2022 | 8541100009 | ELECTRONIC COMPONENTS: DIODES FOR POWER SOURCES OF ELECTRICAL EQUIPMENT, IN A PLASTIC CASE WITH 2 ELECTRIC CONTACTS ON THE EDGES, COMMON NAME: RESISTIVE DIODE, SEMICONDUCTOR TYPE: SILICON, NOMINAL VOLTAGE P 1000V | 1.56 | 20073.5 | United States of America | PSKOV | VMK LLC |
1/24/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 5.42 | 1285.71 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/24/2022 | 8541290000 | TRANSISTOR IPD60R3K3C6ATMA1. N-CHANNEL MOSFET. THE MOS STRUCTURE CONSISTS OF A METAL AND A SEMICONDUCTOR SEPARATED BY A LAYER OF SILICON DIOXIDE (SIO2). IN THE GENERAL CASE, THE STRUCTURE IS CALLED MIS (METAL - DIELECTRIC - SEMICONDUCTOR). REPRESENTS | 1.39 | 416.1 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/25/2022 | 8541100009 | HIGH-VOLTAGE PULSE DIODES, TYPE - SILICON, FOR CONVERSION OF AC PULSE VOLTAGE INTO DC, IN A PLASTIC CASE WITH FLEXIBLE OUTPUTS, APPLIED IN POWER SOURCES OF MEDICAL X-RAY EQUIPMENT | 10 | 2522.25 | China | YIXING JIANGSU CHINA | BITRONIK LLC |
1/10/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 1.35 | 322.23 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/21/2022 | 8541410002 | LEDS, SEMICONDUCTOR, INORGANIC, ON RIGID PRINTED BOARD, SEMICONDUCTOR TYPE - SILICON, MOUNTED IN A CASE, FOR SURFACE MOUNTING | 13.2 | 1148.67 | China | HONG KONG | MT SYSTEMS LLC |
1/26/2022 | 8541100009 | ELECTRONIC COMPONENTS: DIODES FOR POWER SOURCES OF ELECTRICAL EQUIPMENT, IN A PLASTIC CASE WITH 2 ELECTRIC CONTACTS ON THE EDGES, COMMON NAME: SCHOTTKY DIODE, SEMICONDUCTOR TYPE: SILICON, RATED VOLTAGE H 30V DC | 0 | 4.48 | Malaysia | PSKOV | VMK LLC |
1/24/2022 | 8541490000 | SFH6156-2 T. OPTO-COUPLER IS A LED AND PHOTOTRANSISTOR WITH NPN STRUCTURE BASED ON SILICON. THE LED EMITS LIGHT BY AFFECTING THE PHOTOTRANSISTOR, CONTROLLING THE AMOUNT OF CURRENT THROUGH THE PHOTOTRANSISTOR. BUILT IN PLASTIC SMD CASE. | 1.6 | 305.46 | Malaysia | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8541100009 | HIGH-VOLTAGE PULSE DIODES, TYPE - SILICON, FOR CONVERSION OF AC PULSE VOLTAGE INTO DC, IN A PLASTIC CASE, WITH FLEXIBLE CONCLUSIONS, APPLIED IN POWER SOURCES OF MEDICAL X-RAY EQUIPMENT | 2.9 | 10957.2 | Taiwan | ADDISON IL | BITRONIK LLC |