1/18/2022 | 4202390000 | HEADPHONE CASE WOMEN WITH A FRONT SURFACE FROM SHEETS OF POLYMERIC MATERIALS (COMPOSITION 100% SILICONE): | 0.27 | 15.35 | China | MOSCOW RUSSIA | PULL AND BEAR CIS LLC |
1/25/2022 | 8541100009 | DIODE MODULE A DEVICE CONSISTING OF TWO INTERCONNECTED DIODES LOCATED IN A SINGLE PLASTIC CASE ON THE UPPER SURFACE OF THE MODULE 3 CONNECTING TERMINALS ARE LOCATED. TYPE OF SEMICONDUCTOR : SILICON, INTENDED, OPERATING PRINCIPLE: | 28.4 | 1168.7 | China | MOSCOW RUSSIA | ELLOY LLC |
1/24/2022 | 8518309500 | STEREO HEADPHONES ARTICLE HA-FW1800-F-20PCS, INCLUDED: CARRYING CASE, INSTRUCTIONS, 5 PAIRS OF SILICONE HEADS. FEATURES: WOODEN BODY, 11MM HEAD DIAMETER, NEODIMIUM MAGNET, FREQUENCY 6-52,000 Hz, RESISTANCE 16 OHM, EARPHONE WEIGHT 15 | 5.2 | 3524.25 | Japan | MOSCOW RUSSIA | JAVISEY KENWOOD RUS LLC |
1/24/2022 | 8518309500 | HEADPHONES ARTICLE HA-FW03-F-20PCS, INCLUDED 3 SIZE EAR SHAPES FROM SOFT SILICONE RUBBER, CARRYING CASE. CHARACTERISTICS: IN-EAR HEADPHONES, DIAMETER 11 MM, FREQUENCY 6-45,000 Hz, RESISTANCE 16 OHM, POWER 200 MW. | 4.4 | 1054.58 | Japan | MOSCOW RUSSIA | JAVISEY KENWOOD RUS LLC |
1/25/2022 | 8506501000 | POWER BATTERY, LITHIUM BATTERY, IN A SILICONE CASE: ART: 10210603 - 1 PCS; IMPORTED FOR OWN NEED. FOR OIL DRILLING EQUIPMENT | 0.45 | 1850.57 | United States of America | MOSCOW RUSSIA | BAKER HUGES JOINT STOCK COMPANY |
1/27/2022 | 8541100009 | ELECTRONIC COMPONENTS: DIODES FOR POWER SOURCES OF ELECTRICAL EQUIPMENT, IN A PLASTIC CASE WITH 2 ELECTRIC CONTACTS ON THE EDGES, COMMON NAME: RESISTIVE DIODE, SEMICONDUCTOR TYPE: SILICON, NOMINAL VOLTAGE P 1000V | 1.56 | 20073.5 | United States of America | PSKOV | VMK LLC |
1/24/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 5.42 | 1285.71 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/24/2022 | 8541290000 | TRANSISTOR IPD60R3K3C6ATMA1. N-CHANNEL MOSFET. THE MOS STRUCTURE CONSISTS OF A METAL AND A SEMICONDUCTOR SEPARATED BY A LAYER OF SILICON DIOXIDE (SIO2). IN THE GENERAL CASE, THE STRUCTURE IS CALLED MIS (METAL - DIELECTRIC - SEMICONDUCTOR). REPRESENTS | 1.39 | 416.1 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/25/2022 | 8541100009 | HIGH-VOLTAGE PULSE DIODES, TYPE - SILICON, FOR CONVERSION OF AC PULSE VOLTAGE INTO DC, IN A PLASTIC CASE WITH FLEXIBLE OUTPUTS, APPLIED IN POWER SOURCES OF MEDICAL X-RAY EQUIPMENT | 10 | 2522.25 | China | YIXING JIANGSU CHINA | BITRONIK LLC |
1/10/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 1.35 | 322.23 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |