1/10/2022 | 8542324500 | ELECTRONIC INTEGRATED SCHEMES - RAM MEMORY DEVICES WITH A CAPACITY OF 16 Mbit WITHOUT THE FUNCTION OF ENCRYPTION / CRYPTOGRAPHY - SILICON WATER WITH APPLIED CMOS STRUCTURES AND COPPER CONDUCTORS APPLIED ACCORDING TO DRAWING ACB1-01-017 | 2.3 | 708724.2 | China | MOSCOW RUSSIA | PKK MILANDR JSC |
1/20/2022 | 8543708000 | ELECTRIC DEVICE FOR APPLICATION OF COSMETIC (MOISTURIZING) MASKS, POWERED FROM A BUILT-IN BATTERY WITH A CAPACITY OF 1050 MA, COMPLETE WITH A CABLE FOR CHARGING AND INSTRUCTIONS, VARIOUS COLORS, VOLTAGE 3.7 V, MATERIAL SILICONE/PLASTIC IN, PACKED | 35.52 | 13019.3 | China | MOSCOW RUSSIA | FOREO LLC |
1/31/2022 | 8542329000 | SINGLE-TIME PROGRAMMABLE PERMANENT STORAGE DEVICES WITH A CAPACITY OF 2 MB, WITHOUT THE FUNCTION OF ENCRYPTION AND CRYPTOGRAM, IN THE FORM OF SILICON WAVE WITH APPLIED CMOS - STRUCTURES, NOT CUT TO CRYSTALS, MLDR100_REV3_V2 | 1.7 | 507378.3 | Malaysia | MOSCOW RUSSIA | PKK MILANDR JSC |
1/18/2022 | 8535900008 | RESISTOR CAPS CONSIST OF TWO PARTS: 1. SILICONE INSULATION CAP 2. ELECTRICAL CONNECTING CONTACT FOR MAXIMUM VOLTAGE 17000-37000. THE RESISTOR IS USED IN PAIR WITH A HIGH-VOLTAGE WIRE WITH A METAL CORE (WHERE RESISTANT | 259.53 | 7463.19 | Taiwan | KAOHSIUNG PORT IN TAIWAN | SLOH AUTO LLC |
1/13/2022 | 8541100009 | SEMICONDUCTOR DIODES, ARE NOT PHOTODIODES, ARE NOT LIGHT EMITTING DIODES: VARATOR DIODE (VARIABLE CAPACITY DIODE), SEMICONDUCTOR TYPE - SILICON, FOR SURFACE MOUNTING ON | 1.43 | 195551.5 | China | SHENZHEN CHINA | ICE COMPONENTS LLC |
1/26/2022 | 8535900008 | RESISTOR CAPS CONSIST OF TWO PARTS: 1. SILICONE INSULATION CAP 2. ELECTRICAL CONNECTING CONTACT FOR MAXIMUM VOLTAGE 17000-37000. THE RESISTOR IS USED IN PAIR WITH A HIGH-VOLTAGE WIRE WITH A METAL CORE (WHERE RESISTANT | 20.96 | 388.74 | Taiwan | KAOHSIUNG PORT IN TAIWAN | SLOH AUTO LLC |