1/28/2022 | 8541290000 | FIELD TRANSISTOR, DESIGNED FOR SIGNAL AMPLIFICATION OF THE TRANSMISSION PATH, DISPOSION POWER 389 WATT. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT AND HAZARDOUS WASTE, IS NOT IN THE LIST OF RADIO ELECTRONIC EQUIPMENT AND (OR) HIGH-FREQUENCY DEVICES, | 2.16 | 7746 | Morocco | ST PETERSBURG RUSSIA | LABORATORY OF INTERNET OF THINGS LLC |
1/22/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICE. OPTOISULATOR TRANSISTOR (SINGLE-CHANNEL), INTENDED FOR SURFACE MOUNTING ON A PRINTED BOARD IN TELECOMMUNICATION EQUIPMENT FOR TRANSMISSION OF LOGIC SIGNALS IN ISOLATED ELECTRICAL | 0.12 | 64.01 | Thailand | NOVOSIBIRSK AIRPORT TOLMACHEVO | MICROSAN LLC |
1/11/2022 | 8541410009 | LIGHT EMITTING LASER DIODES DESIGNED FOR OPTICAL SIGNAL TRANSMISSION. FIELD OF APPLICATION: DATA TRANSMISSION IN TELECOMMUNICATIONS. (NOT HAZARDOUS WASTE) | 2.52 | 12210.4 | Taiwan | HSIN CHU TAIWAN | SVARNOY LLC |
1/31/2022 | 8541410009 | PHOTODIODS. APPLIED FOR TRANSMISSION OF CABLE TELEVISION SIGNALS. DESIGNED FOR CONVERSION OF OPTICAL SIGNAL INTO RADIO FREQUENCY. OPERATING VOLTAGE 5 V. MAXIMUM INPUT OPTICAL POWER +4 dBm. TYPE OF SEMICONDUCTOR INDIUM-ARSENIDE GALI | 83 | 12473.4 | China | YICHANG | POINT OPORA LLC |
1/27/2022 | 8541410009 | PHOTODIODES - 10000 PCS. APPLIED FOR TRANSMISSION OF CABLE TELEVISION SIGNALS. DESIGNED FOR CONVERSION OF OPTICAL SIGNAL INTO RADIO FREQUENCY. OPERATING VOLTAGE 5 V. MAXIMUM INPUT OPTICAL POWER +4 dBm /+6 dBm. TYPE OF SEMICONDUCTOR | 53 | 14538.1 | China | WUHAN | POINT OPORA LLC |